Atomic Layer Dielectric Deposition With In-Cycle Surface Planarization
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Solution Overview
Problem
In high aspect ratio structures like DRAM capacitors, atomic layer deposition results in thin dielectric layers with high surface roughness, hindering the achievement of high capacitance and low leakage current.
Innovation Solution
A layer deposition method and apparatus that alternately supply precursor and reaction gases to form atomic layers, followed by surface planarization using pressure to diffuse atoms on the substrate, reducing surface roughness, and repeating the process until the desired thickness is achieved.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition is used to form thin dielectric layers in high aspect ratio structures, then the dielectric layer can be formed, but the surface roughness increases
Solution Approach 1:
The patent applies pressure to the atomic layer surface immediately after deposition to planarize it before subsequent layers are deposited. This preliminary action prevents surface roughness from accumulating and affecting the final capacitor performance, thereby resolving the contradiction between forming thin dielectric layers and maintaining low surface roughness.
2Reliability
If atomic layers are stacked to form dielectric layer, then the dielectric layer is formed, but surface roughness increases making it difficult to achieve high capacitance and low leakage current
Solution Approach 1:
The patent applies pressure to the atomic layer surface immediately after deposition to planarize it before subsequent layers are deposited. This preliminary action prevents surface roughness from accumulating and affecting the final capacitor performance, thereby resolving the contradiction between forming thin dielectric layers and maintaining low surface roughness.
3Manufacturing precision
If pressure is applied to diffuse atoms on the surface, then surface roughness is reduced, but additional process steps are required
Solution Approach 1:
The patent combines the pressure application step with the existing atomic layer deposition process sequence, integrating surface planarization into the deposition cycle. This merging approach reduces process complexity by utilizing the existing process infrastructure rather than adding completely separate planarization equipment and procedures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of dielectric layers with reduced surface roughness, leading to capacitors with desired characteristics of high capacitance and low leakage current.
Implementation Method 1
a precursor gas and a reaction gas are alternately supplied into the chamber to form at least one atomic layer
Implementation Method 2
A surface of the at least one atomic layer is planarized by applying pressure on the surface of the at least one atomic layer to diffuse atoms located on the surface having a relatively high curvature
Data Source
AI summary
In a method of a method of depositing a layer, a substrate is loaded on a substrate stage within a chamber. A precursor gas and a reaction gas are alternately supplied into the chamber to form at least one atomic layer. A surface of the at least one atomic layer is planarized by applying pressure on the surface of the at least one atomic layer to diffuse atoms located on the surface having a relatively high curvature. The precursor gas and the reaction gas are alternately supplied into the chamber to form at least one atomic layer on the planarized atomic layer.