Atomic Spray Substrate Cleaning for Charge Volcano Damage
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Solution Overview
Problem
The continuous changes in semiconductor structures and increased manufacturing steps lead to surface defects on substrates, resulting in decreased yields in semiconductor devices, primarily due to electric charge accumulation causing 'electric charge volcano' damage.
Innovation Solution
Cleaning the substrate with an atomic spray followed by rinsing with deionized water or a chemical solution to effectively remove electric charges, preventing damage from electric charge accumulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional cleaning methods are used on semiconductor substrates, then cleaning efficiency is maintained, but electric charge accumulation occurs causing surface defects and yield reduction
Solution Approach 1:
The patent introduces an intermediary substance (conducting liquid or gas) to mediate between the substrate surface and the charge removal mechanism. This intermediary facilitates controlled charge dissipation while preventing direct contact damage, thereby improving substrate surface quality without compromising manufacturing yield
Solution Approach 2:
The patent changes the physical parameters of the cleaning environment by introducing conducting liquids or gases with specific electrical conductivity properties. This parameter change enables effective charge removal while maintaining substrate integrity, resolving the contradiction between surface quality and manufacturing yield
2Reliability
If multiple cleaning steps are added to remove electric charges, then substrate surface quality improves, but process complexity increases
Solution Approach 1:
The patent develops a multi-functional cleaning solution that simultaneously performs mechanical cleaning and electrical charge removal in a single step. The conducting liquid or gas serves multiple functions: cleaning contaminants while dissipating electric charges, thereby improving substrate surface quality without increasing process complexity
3Productivity
If aggressive cleaning methods are used to remove charges quickly, then charge removal efficiency improves, but substrate damage risk increases
Solution Approach 1:
The patent applies beforehand cushioning by using conducting liquids or gases that provide a buffered, controlled pathway for charge dissipation. This cushioning mechanism prevents sudden charge discharge that could damage the substrate, while still achieving efficient charge removal through the conductive medium
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents electric charge volcano damage on semiconductor substrates by transferring and removing electric charges through multiple contact points, thereby enhancing process yields and maintaining substrate integrity.
Implementation Method 1
cleaning the substrate with an atomic spray followed by rinsing the substrate with deionized water, the electric charges can be effectively removed from the surface of the substrate to prevent the electric charge volcano from occurring
Data Source
AI summary
A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.