Au-Ag-Pd Composite Bonding Wire for Semiconductor Packaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional pure Au bonding wires used in semiconductor packaging are expensive due to their superior physical properties, necessitating a cost-effective alternative with comparable performance.
Innovation Solution
A composite alloy bonding wire made of Gold, Silver, and Palladium, manufactured through a process involving vacuum melting, casting, and drawing, with compositions ranging from 8.00 wt. % Au to 30.00 wt. % Au, 66.00 wt. % Ag to 90.00 wt. % Ag, and 0.01 wt. % Pd to 6.00 wt. % Pd, to achieve performance comparable to pure Au wires while reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pure Au bonding wire is used, then physical properties such as elongation and electrical conductivity are improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent applies composite materials by creating a multi-layer wire structure with a Au—Ag—Pd alloy core and a pure Au cladding layer. This composite structure combines the cost benefits of the alloy core with the superior physical properties of the pure Au outer layer, resolving the contradiction between reliability and manufacturing cost.
Solution Approach 2:
The patent implements local quality by applying pure Au only to the cladding layer that directly contacts the chip and substrate, while the inner core uses the cost-effective Au—Ag—Pd alloy. This localized application of expensive material only where physically necessary maintains bonding performance while reducing overall cost.
2Ease of manufacture
If Au—Ag—Pd alloy wire is used, then manufacturing cost decreases, but physical properties such as elongation and bondability may deteriorate
Solution Approach 1:
The composite wire structure with pure Au cladding compensates for the inferior physical properties of the Au—Ag—Pd alloy core, ensuring that the overall wire meets the required elongation and bondability specifications while maintaining cost advantages.
Solution Approach 2:
The patent optimizes the composition parameters of the Au—Ag—Pd alloy (specific ratios of Au, Ag, and Pd) and the cladding layer thickness to achieve the right balance between cost reduction and maintaining adequate physical properties for semiconductor bonding applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Au-Ag-Pd composite alloy wire offers performance comparable to pure Au wires while significantly decreasing manufacturing costs, making it a cost-effective solution for semiconductor packaging.
Implementation Method 1
a primary metal material of Au and Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary metal material to obtain a Au—Ag—Pd alloy solution
Data Source
AI summary
A manufacturing method for a composite alloy bonding wire is provided. A primary material of Au and Ag is melted in a vacuum melting furnace, and then a secondary metal material of Pd is added into the vacuum melting furnace and is co-melted with the primary material to obtain a Au—Ag—Pd alloy solution. The obtained Au—Ag—Pd alloy solution is drawn to obtain a Au—Ag—Pd alloy wire. The Au—Ag—Pd alloy wire is then drawn to obtain a Au—Ag—Pd alloy bonding wire with a predetermined diameter.