Automatic Copper Deposition Profile Targeting
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Solution Overview
Problem
Current copper deposition methods for integrated circuits face challenges in achieving uniform deposition profiles across large substrates with patterned surfaces, leading to inefficiencies and increased costs due to the need for manual adjustments and frequent re-calibration, which are prone to operator and tool-dependent variations and unable to compensate for process fluctuations effectively.
Innovation Solution
An automatic deposition profile targeting method using an advanced process control system that measures actual thickness profiles and calculates corrections for deposition parameters, allowing for dynamic adjustment of plating tool settings to match target profiles, reducing the reliance on test wafers and enabling self-sufficient process control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If manual adjustments and frequent re-calibration are used to achieve uniform deposition profiles, then deposition uniformity is improved, but operator and tool-dependent variations increase and productivity decreases
Solution Approach 1:
The system automatically measures the deposition profile using a profiling tool and adjusts deposition tool settings without operator intervention. The automated feedback loop enables the system to self-correct profile deviations, eliminating manual adjustments while maintaining deposition uniformity across large substrates.
Solution Approach 2:
The system implements a closed-loop feedback mechanism where the deposition profile is continuously measured and compared against target specifications. Based on the measured deviations, the system automatically adjusts deposition parameters to correct profile errors, ensuring consistent uniformity without requiring frequent manual re-calibration.
2Manufacturing precision
If manual adjustments and frequent re-calibration are used to achieve uniform deposition profiles, then deposition uniformity is improved, but operator and tool-dependent variations increase
Solution Approach 1:
The automated measurement and adjustment system eliminates operator-dependent variations by removing manual intervention from the calibration process. The system consistently applies the same measurement and correction algorithms, ensuring reliable and reproducible deposition profiles across different operators and tools.
Solution Approach 2:
The closed-loop feedback system continuously monitors deposition profiles and automatically corrects deviations, ensuring consistent process outcomes regardless of operator skill levels or tool variations. This automated feedback mechanism enhances process reliability by maintaining uniform deposition profiles through systematic, repeatable adjustments.
3Manufacturing precision
If test wafers are used for adjusting plating profile, then plating profile accuracy is improved, but time consumption and resource consumption increase
Solution Approach 1:
The system performs automated profile measurement and adjustment using virtual test wafer data, eliminating the need for physical test wafers. The automated system quickly processes profile data and adjusts deposition parameters, reducing adjustment time from hours or days to minutes while maintaining profile accuracy.
Solution Approach 2:
The system uses virtual test wafer profiles (digital copies) instead of physical test wafers to characterize and adjust the deposition process. This virtual modeling approach maintains the accuracy benefits of test wafer measurements while eliminating the time-consuming physical measurement and handling of actual test substrates.
4Manufacturing precision
If test wafers are used for adjusting plating profile, then plating profile accuracy is improved, but resource consumption increases
Solution Approach 1:
The system replaces physical test wafers with virtual test wafer models that contain the necessary profile information. This digital copying approach maintains the ability to accurately characterize and adjust plating profiles while completely eliminating the consumption of physical test substrates, reducing material waste and associated costs.
5Device complexity
If static method with fixed plating tool settings is used, then process simplicity is improved, but ability to compensate for process fluctuations decreases
Solution Approach 1:
The system transitions from static, fixed deposition settings to dynamic, adaptive control where deposition parameters are continuously adjusted based on real-time profile measurements. This dynamic approach allows the system to respond to process fluctuations and maintain reliable deposition profiles without significantly increasing operational complexity.
Solution Approach 2:
The closed-loop feedback system continuously monitors deposition profiles and automatically adjusts deposition parameters to compensate for process variations. This feedback mechanism enhances process stability and reliability by detecting and correcting deviations in real-time, while the automated nature of the system keeps the increase in complexity manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method ensures consistent and efficient copper wiring structures by dynamically adjusting plating tool settings, reducing production costs and minimizing resource consumption, while compensating for process fluctuations and improving yield in semiconductor chip manufacturing.
Implementation Method 1
electroplating of copper and copper alloys is the currently preferred deposition method of forming metallization layers
Implementation Method 2
copper cannot be deposited efficiently by physical vapor deposition, for example, by sputter deposition
Implementation Method 3
chemical mechanical planarization (CMP), also known as chemical mechanical polishing, is used to remove the copper to the top level of the trench
Data Source
AI summary
A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.