Auxiliary Gate Electrode Leakage Current Suppression

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Solution Overview

Problem

Organic light-emitting display apparatuses face issues with leakage currents in switching transistors, leading to inaccurate black color display and reduced lifespan due to excessive light emission during black color representation.

Innovation Solution

Incorporating an auxiliary gate electrode between the gate electrode and the channel region of thin-film transistors, with a negative voltage applied to the auxiliary gate electrode to reduce leakage currents by minimizing electric fields, thereby enhancing the channel region's insulation and extending the transistor's lifespan.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional thin-film transistor structure is used, then the device complexity is low, but leakage current occurs leading to inaccurate black color display and reduced transistor lifespan

Engineering Contradiction:
Improvetransistor lifespan and black color accuracyVSAvoidtransistor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The gate control structure is segmented into a main gate electrode and an auxiliary gate electrode. The auxiliary gate electrode is positioned between the main gate electrode and the channel region, creating distinct functional zones for voltage control and leakage suppression within the transistor structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The auxiliary gate electrode serves as an intermediary element between the main gate electrode and the channel region. It mediates the electric field distribution by providing an additional control point that can independently suppress leakage currents while maintaining the overall gate control function.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If the auxiliary gate electrode is positioned to overlap a larger area of the channel region, then leakage current suppression is improved, but the transistor's effective channel area is reduced

Engineering Contradiction:
Improveleakage current suppressionVSAvoidtransistor current driving capability
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The auxiliary gate electrode is positioned to overlap only a specific portion of the channel region, specifically the area adjacent to the drain region, rather than the entire channel. This localized approach suppresses leakage currents at the critical drain-channel interface while preserving the majority of the channel area for normal current conduction.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces leakage currents and improves the accuracy of black color representation by minimizing unnecessary light emission during black displays, while also extending the lifespan of the thin-film transistors.

Implementation Method 1

A first voltage is applied to the auxiliary gate electrode... The first voltage may have a negative direct current voltage level... The first voltage may have a voltage level from about −6 V to about 0 V

Methodology Applied
Scientific EffectElectric Field: Electric Field

Data Source

PatentUS10249236B2Organic light-emitting display apparatus including an auxiliary gate electrode
Publication Date: 2019.04.02 SAMSUNG DISPLAY CO LTD
  • US10249236B2 patent drawing
  • US10249236B2 patent drawing
  • US10249236B2 patent drawing

AI summary

An organic light-emitting display apparatus includes a substrate and an active layer disposed on the substrate. The active layer includes a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate electrode overlaps the channel region. An auxiliary gate electrode is disposed between the gate electrode and the channel region. A first voltage is applied to the auxiliary gate electrode. A first thin-film transistor includes the active layer, the auxiliary gate electrode, and the gate electrode.