Auxiliary Layer Acid Diffusion for Sub-Resolution Pattern Formation
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Solution Overview
Problem
The existing photolithography process for semiconductor device pattern formation is limited by the exposure resolution, preventing the creation of finer patterns necessary for high integration density.
Innovation Solution
A method involving the lamination of auxiliary layers with varying acid diffusion regions and hard mask patterns, where acid diffusion rates are controlled to form patterns narrower than the exposure resolution limit, allowing for the formation of finer semiconductor device patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used for pattern formation, then pattern formation is achieved, but pattern fineness is limited by exposure resolution
Solution Approach 1:
The photoresist layer is divided into multiple auxiliary layers (first auxiliary layer, second auxiliary layer, third auxiliary layer) with different acid diffusion characteristics. Each layer contributes to forming a portion of the final pattern, allowing the cumulative effect to achieve sub-resolution fineness that no single layer could achieve alone.
Solution Approach 2:
Each auxiliary layer is assigned different local properties: the first auxiliary layer has slow acid diffusion, the second auxiliary layer has moderate acid diffusion, and the third auxiliary layer has fast acid diffusion. This local differentiation enables precise control over pattern formation at different stages, achieving overall sub-resolution precision.
2Manufacturing precision
If exposure resolution is increased to form finer patterns, then pattern fineness improves, but manufacturing complexity increases
Solution Approach 1:
Instead of increasing exposure resolution in a single step, the process segments pattern formation into multiple sequential stages using different auxiliary layers. Each layer performs a specific function in the pattern formation sequence, distributing the complexity across manageable steps rather than requiring a single complex high-resolution exposure.
Solution Approach 2:
The multiple auxiliary layers act as intermediaries between the exposure process and the final pattern. These intermediate layers with different acid diffusion rates mediate the transformation, allowing gradual pattern refinement that simplifies the overall process compared to direct high-resolution exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the creation of patterns with dimensions below the exposure resolution limit, such as 10 nm level, by controlling acid diffusion and hard mask pattern formation, overcoming the limitations of traditional photolithography.
Implementation Method 1
forming first acid diffusion regions spaced apart from each other and each having a first width within the third auxiliary layer, forming second acid diffusion regions spaced apart from each other and each having a second width wider than the first width within the second auxiliary layer, and forming third acid diffusion regions spaced apart from each other and each having a third width narrower than the first width within the first auxiliary layer
Implementation Method 2
The first to third acid diffusion regions preferably are formed by generating acid within the third to first auxiliary layers, respectively, by an exposure process
Data Source
AI summary
A method of forming fine patterns comprises laminating respective first, second, and third auxiliary layers over an underlying layer, forming first acid diffusion regions spaced apart from each other and each having a first width within the third auxiliary layer, forming second acid diffusion regions spaced apart from each other and each having a second width wider than the first width within the second auxiliary layer, and forming third acid diffusion regions spaced apart from each other and each having a third width narrower than the first width within the first auxiliary layer, forming first auxiliary patterns separated from each other at an interval of the third width, forming second auxiliary patterns on respective first auxiliary patterns and separated from each other at an interval of the second width, and forming third auxiliary patterns on respective second auxiliary patterns and separated from each other at an interval of the first width by removing the first to third acid diffusion regions, respectively, forming a first hard mask pattern between the first auxiliary patterns and forming a second hard mask pattern on sidewalls of each of the second auxiliary patterns under respective third auxiliary patterns, removing the third auxiliary patterns to expose the second auxiliary patterns, removing the second auxiliary patterns and some of the first auxiliary patterns exposed between the first and second hard mask patterns, and removing some of the first auxiliary patterns exposed by the removal of the second auxiliary patterns.