Auxiliary Layer Etch Mask for Semiconductor Pattern Resolution
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Solution Overview
Problem
The existing pattern formation processes for semiconductor devices are limited by equipment constraints and difficulty in achieving smaller pattern sizes and higher performance, particularly in forming micro patterns with varying densities and pitches.
Innovation Solution
A method involving the use of auxiliary layers and photoresist patterns, where an auxiliary layer is formed over the semiconductor substrate and photoresist patterns, and then denatured to create etch mask patterns, allowing for the formation of micro patterns with specific pitch and width variations by controlling light exposure and using different solubility materials for the photoresist and auxiliary layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional pattern formation process is used, then the process is simple and equipment requirements are met, but the pattern size cannot be reduced further and manufacturing precision is limited
Solution Approach 1:
The patent segments the pattern formation process into multiple stages: forming auxiliary patterns, forming photoresist patterns, and selective removal. This segmentation allows each stage to be optimized independently, enabling sub-50nm pattern precision while managing overall process complexity through systematic division of steps.
Solution Approach 2:
The patent applies preliminary action by pre-forming auxiliary patterns before creating the final photoresist patterns. These auxiliary patterns serve as templates that guide subsequent pattern formation, enabling higher precision patterns to be formed with controlled dimensions that would be difficult to achieve directly.
2Manufacturing precision
If equipment limitations are accepted, then the process is easier to implement, but pattern density and resolution cannot be improved
Solution Approach 1:
The patent introduces auxiliary patterns as intermediary structures that mediate between the photoresist patterns and the final etched patterns. These intermediaries enable higher resolution pattern transfer by providing a stable template that can be formed with precise dimensions, thereby achieving sub-50nm resolution without requiring advanced lithography equipment.
Solution Approach 2:
The patent changes material parameters by using different materials for auxiliary patterns and photoresist patterns, each optimized for specific functions. The auxiliary patterns use materials with suitable etch selectivity and dimensional stability, while photoresist patterns use materials optimized for lithographic patterning, enabling high-resolution pattern formation through material property optimization.
3Quantity of substance
If photoresist patterns are formed with small pitch, then pattern density increases, but the gap between patterns becomes insufficient for proper formation
Solution Approach 1:
The patent transitions from two-dimensional photoresist patterns to three-dimensional auxiliary patterns with vertical structures. This dimensional change allows the auxiliary patterns to provide mechanical support and dimensional stability even when horizontal gaps between patterns are reduced to sub-50nm pitches, enabling high pattern density while maintaining formation quality.
Solution Approach 2:
The patent uses composite material structures where auxiliary patterns and photoresist patterns are formed with different material compositions optimized for their respective functions. The auxiliary patterns use materials with high etch selectivity and dimensional stability, while photoresist patterns use materials optimized for lithographic definition, enabling dense pattern formation with proper gap control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of etch mask patterns with improved resolution and density, allowing for more precise and dense pattern formation, overcoming the limitations of traditional methods by creating stable and effective etch mask patterns for semiconductor devices.
Implementation Method 1
The first and second auxiliary patterns can be formed by diffusing hydrogen ions (H+) into the auxiliary layer.
Implementation Method 2
The second auxiliary pattern can be formed by performing an exposure process on the photoresist film.
Data Source
AI summary
In a method of forming patterns of a semiconductor device, a semiconductor substrate defining photoresist patterns formed over a target etch layer is provided. An auxiliary layer is formed over the semiconductor substrate and the photoresist patterns. The auxiliary layer formed on a surface of the photoresist patterns is denatured into first auxiliary patterns. A photoresist film is formed over the semiconductor substrate, the first auxiliary patterns, and the auxiliary layer. The auxiliary layer formed below the photoresist film is denatured into a second auxiliary pattern. Here, the auxiliary layer remains only between the photoresist patterns. Etch mask patterns, including the photoresist patterns and the auxiliary layer, are formed by removing the photoresist film and the first and second auxiliary patterns.