Auxiliary Features for Maskless Lithography Resolution
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Solution Overview
Problem
Current lithography techniques face challenges in achieving improved resolutions as device sizes decrease, particularly in the manufacturing of semiconductor devices and liquid crystal displays, where there is a need for enhanced resolution and pattern precision.
Innovation Solution
The method involves determining the position and width of auxiliary features based on main features in a lithographic process, using either a rule-based process flow or a lithography model to predict aerial images and resist profiles, and applying a pattern bias to improve intensity log-slope and depth-of-focus, which are then converted into a virtual mask file for patterning in a maskless lithography device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device sizes are decreased to achieve higher integration, then productivity and device density are improved, but manufacturing precision and resolution deteriorate
Solution Approach 1:
The patent applies segmentation by dividing the pattern formation process into multiple stages: first forming main features, then adding auxiliary features to enhance resolution. This multi-stage approach allows each stage to optimize for specific requirements, maintaining precision even as device sizes decrease
Solution Approach 2:
The patent introduces auxiliary features as intermediary elements between the lithography system and the main features. These auxiliary features act as mediators that modify the aerial image intensity distribution, thereby improving the resolution of the main features without requiring changes to the fundamental lithography process
2Manufacturing precision
If conventional lithography methods are used, then process simplicity is maintained, but resolution and process window are insufficient
Solution Approach 1:
The patent applies preliminary action by pre-calculating and pre-positioning auxiliary features before the actual lithography exposure. The auxiliary features are determined through computational methods (aerial image simulation, optimization algorithms) in advance, so that during the actual lithography process, only the pattern writing step is needed, maintaining relative process simplicity while achieving improved resolution
Data Source
AI summary
Embodiments described herein relate to methods of printing features within a lithography environment. The methods include determining a mask pattern. The mask pattern includes auxiliary features to be provided with main features to a maskless lithography device in a lithography process. The auxiliary features are determined with a rule-based process flow or a lithography model process flow.