Avalanche Diode Arrangement With Latch Comparator For Excess Bias Monitoring

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Solution Overview

Problem

Avalanche diodes, particularly single photon avalanche diodes (SPADs), face challenges in efficiently monitoring and controlling excess bias voltage, leading to high power consumption and variability in performance due to temperature changes, which affects detection accuracy and reliability in applications like time-correlated single photon counting and time-of-flight measurements.

Innovation Solution

The implementation of an avalanche diode arrangement that includes a latch comparator and a quenching circuit, allowing for the direct monitoring of excess bias voltage and reducing power consumption by enabling the latch comparator only during photon detection events, with a digital control circuit managing the comparator's enable signal to minimize idle state power usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the latch comparator is continuously enabled to monitor excess bias voltage, then monitoring accuracy is improved, but power consumption increases

Engineering Contradiction:
Improveexcess bias voltage monitoring accuracyVSAvoidpower consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The latch comparator is enabled periodically only during the integration period when monitoring is required, rather than continuously. The enable signal activates the comparator during specific time windows (when the integration switch is closed) and keeps it disabled otherwise, achieving periodic operation that reduces power consumption while maintaining monitoring accuracy during critical periods.

Inventive Principle:
Principle #19Periodic action

2Stability of the object's composition

If the integration capacitor has large capacitance to reduce ripple voltage, then voltage stability is improved, but the time to reach threshold voltage increases

Engineering Contradiction:
Improvevoltage stabilityVSAvoidtime to reach threshold voltage
Core Design Contradiction:
Stability of the object's compositionVSLoss of time

Solution Approach 1:

The integration capacitor is pre-charged to the reference voltage Vref through the integration switch before the monitoring period begins. This preliminary action ensures that the capacitor starts at the correct voltage level, allowing the excess bias voltage to be integrated without delay and reaching the threshold voltage faster, thus reducing the time loss while maintaining voltage stability.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the avalanche diode operates with high excess bias voltage to improve photon detection sensitivity, then detection sensitivity is improved, but dark count rate increases

Engineering Contradiction:
Improvephoton detection sensitivityVSAvoiddark count rate
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The circuit continuously monitors the excess bias voltage through the latch comparator and provides feedback control. When the integrated voltage reaches the threshold (indicating excessive excess bias voltage), the system detects this condition and can adjust the bias voltage accordingly. This feedback mechanism allows the system to operate at high excess bias voltage for improved sensitivity while automatically detecting and correcting conditions that lead to high dark count rates.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables low power consumption and accurate monitoring of excess bias voltage, maintaining consistent SPAD performance across temperature variations, thereby enhancing detection accuracy and reliability in photon detection applications.

Implementation Method 1

When the photon hits the SPAD, an electron-hole pair is generated and a very high short current pulse is generated due to the very high electrical field

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

The SPAD is reverse biased with a bias voltage higher than a breakdown voltage of the avalanche diode. When the photon hits the SPAD, an electron-hole pair is generated

Methodology Applied
Scientific EffectAvalanche breakdown: Avalanche Breakdown

Data Source

PatentUS11181418B2Avalanche diode arrangement and method for controlling an avalanche diode arrangement
Publication Date: 2021.11.23 AUSTRIAMICROSYSTEMS AG
  • US11181418B2 patent drawing
  • US11181418B2 patent drawing
  • US11181418B2 patent drawing

AI summary

A avalanche diode arrangement comprises an avalanche diode (11) that is coupled to a first voltage terminal (14) and to a first node (15), a latch comparator (12) with a first input (16) coupled to the first node (15), a second input (17) for receiving a reference voltage (VREF) and an enable input (21) for receiving a comparator enable signal (CLK), and a quenching circuit (13) coupled to the first node (15).