Avalanche Photodiode Array Cross Talk Suppression

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Solution Overview

Problem

Densely packed Geiger-mode avalanche photodiode arrays experience significant optical cross talk, leading to false detection events and reduced performance, particularly in high-density arrays used for applications like terrain mapping and deep space communication.

Innovation Solution

The implementation of an avalanche photodiode array design where each photodiode is laterally isolated from others, with a cross talk blocking material region adjacent to the photodiodes that absorbs or reflects secondary photons, preventing them from traveling between photodiodes and eliminating optical cross talk.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If photodiodes are densely packed to increase array density and reduce size, then array integration and scalability improve, but optical cross talk between photodiodes increases causing false detection events

Engineering Contradiction:
Improvearray densityVSAvoiddetection accuracy
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent divides the photodiode array into laterally isolated units by removing substrate material between adjacent photodiodes, creating physically separated detection elements that prevent cross talk while maintaining high array density

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent extracts and removes the substrate material that connects and supports the photodiodes, eliminating the medium through which secondary photons could travel between adjacent photodiodes and cause false detections

Inventive Principle:
Principle #2Taking out (Extraction)

2Area of stationary object

If photodiodes are spaced closer together to increase array size and coverage, then imaging resolution and field of view improve, but cross talk intensity increases leading to blurring and potential blinding of the array

Engineering Contradiction:
Improvearray coverageVSAvoidcross talk intensity
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

By laterally isolating each photodiode through substrate removal, the patent enables closer spacing without increasing cross talk, as each photodiode operates independently without optical coupling through the substrate

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces air gaps (void spaces) between adjacent photodiodes that act as optical isolators, preventing secondary photons from traveling between photodiodes while allowing the photodiodes to be positioned closer together

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If Geiger-mode operation is used to achieve single-photon detection accuracy, then detection sensitivity improves, but secondary photon emission increases causing more cross talk events

Engineering Contradiction:
Improvesingle-photon detection accuracyVSAvoidsecondary photon emission
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

The patent removes the substrate that would transmit secondary photons between photodiodes, eliminating the harmful effect of secondary photon emission from Geiger-mode operation while preserving the detection sensitivity benefit

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent converts the harmful secondary photons generated during Geiger-mode avalanche events into beneficial isolated events by preventing their propagation to neighboring photodiodes, allowing aggressive biasing for maximum detection sensitivity without cross talk penalties

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances imager performance by allowing increased detection efficiency and sharper feature definition in 3D laser radar images, enabling closer spacing of photodiodes without increased cross talk, and supports a wide range of advanced single-photon detection applications.

Implementation Method 1

a cross talk blocking material region adjacent to the photodiodes that absorbs or reflects secondary photons

Methodology Applied
Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Implementation Method 2

a cross talk blocking material region adjacent to the photodiodes that absorbs or reflects secondary photons

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 3

the absorption of an incident photon at the APD to produce secondary charges by impact ionization

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 4

An APD is operated-under reverse bias conditions that enable the absorption of an incident photon at the APD to produce secondary charges by impact ionization, lending the term 'avalanche'

Methodology Applied
Scientific EffectAvalanche Breakdown: Avalanche Breakdown

Data Source

PatentUS10109671B2Photodiode array structure for cross talk suppression
Publication Date: 2018.10.23 MASSACHUSETTS INST OF TECH
  • US10109671B2 patent drawing
  • US10109671B2 patent drawing
  • US10109671B2 patent drawing

AI summary

There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.