Axial 3D LED Structure Using MOVPE for Green-Red Emission
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Solution Overview
Problem
The manufacturing of high-performance, three-dimensional (3D) light-emitting diodes (LEDs) based on gallium nitride (GaN) with axial architecture for green or red emission is not viable on an industrial scale due to the limitations of molecular beam epitaxy (MBE) and the defects in mesa structures formed by conventional planar technology.
Innovation Solution
A method using metalorganic vapour-phase epitaxy (MOVPE) to form axial 3D structures with a high density of bottom parts separated by a distance of less than 180 nm, allowing for the deposition of InGaN quantum wells mainly on the top of the bottom parts, enabling the production of industrially compatible axial 3D LEDs with sufficient indium concentration for green or red emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If molecular beam epitaxy (MBE) is used to manufacture axial 3D LEDs with high indium concentration, then the radiative efficiency and emission performance in green or red spectrum are improved, but the manufacturing complexity and industrial scalability deteriorate
Solution Approach 1:
The patent changes the separation distance parameter between bottom parts to less than 180 nm, which enables MOVPE to deposit InGaN quantum wells mainly on the top of bottom parts rather than laterally, achieving axial architecture with high indium concentration through a different physical mechanism than MBE
Solution Approach 2:
The patent replaces the expensive and complex MBE equipment with the more common and industrially scalable MOVPE equipment, using a different deposition mechanism that achieves the same functional result through parameter optimization rather than relying on specialized equipment
2Ease of manufacture
If conventional planar technology with mesa structures is used, then the manufacturing process is simple and industrial-compatible, but defects on lateral walls increase causing non-radiative surface recombinations
Solution Approach 1:
The patent transitions from two-dimensional planar mesa structures to three-dimensional axial structures where quantum wells are oriented perpendicular to the substrate, eliminating the problematic lateral walls that cause non-radiative recombination while maintaining industrial manufacturability through MOVPE
3Ease of manufacture
If the separation distance between bottom parts is large, then the manufacturing process is easier, but the deposition of InGaN quantum wells occurs laterally instead of on top, preventing axial architecture formation
Solution Approach 1:
The patent identifies and exploits a critical threshold parameter - the separation distance between bottom parts must be less than 180 nm - which fundamentally changes the deposition behavior from lateral to vertical, enabling axial architecture formation through MOVPE by precise parameter control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the industrial-scale production of axial 3D LEDs with improved radiative efficiency by forming axial structures using MOVPE, reducing defects and enhancing the concentration of indium in quantum wells, thus achieving efficient light emission in the green or red spectrum.
Implementation Method 1
Formation by metalorganic vapour-phase epitaxy (MOVPE) of the active regions on the tops of the bottom parts
Data Source
AI summary
A method for manufacturing three-dimensional (3D) structures for optoelectronics, each 3D structure including, in a stack along (z), a bottom part bearing on a substrate, an active region configured to emit light radiation, said active region bearing on a top of the bottom part, and a top part bearing on a top of the active region, the method including provision of a substrate carrying a plurality of bottom parts of 3D structures, said bottom parts having distinct tops such that the tops of two adjacent bottom parts are separated from each other by a separation distance ds of less than 180 nm, formation by metalorganic vapour-phase epitaxy (MOVPE) of the active regions on the tops of the bottom parts, formation of the top parts on the tops of the active regions. An embodiment also relates to an optoelectronic device based on a plurality of these 3D structures.