Aza-allyl Metal Coordination Complexes for Low-Carbon CVD Films
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Solution Overview
Problem
Current chemical vapor deposition (CVD) and atomic layer deposition (ALD) precursors for semiconductor and microelectronics applications, such as cobalt-based films, often suffer from poor thermal stability and carbon contamination issues.
Innovation Solution
Development of metal coordination complexes incorporating aza-allyl ligands, specifically structures where a metal atom is coordinated with aza-allyl ligands, which enhance thermal stability and reduce carbon contamination, allowing for the deposition of low-carbon films using processes like CVD and ALD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional CVD and ALD precursors are used for depositing metal films, then the deposition process can be performed, but the films suffer from carbon contamination and poor thermal stability
Solution Approach 1:
The patent changes the chemical structure of the precursor by introducing aza-allyl ligands with specific substituents (R1-R4 groups) coordinated to the metal atom. This structural parameter change results in improved thermal stability and reduced carbon contamination compared to conventional precursors, as the aza-allyl ligands provide better thermal resilience and lower carbon content during deposition processes
Solution Approach 2:
The patent creates a composite precursor structure combining a metal atom with aza-allyl ligands that have specific substituent groups (alkyl, alkenyl, alkynyl, cycloalkyl, silyl, or halogen). This composite molecular structure integrates the benefits of the metal center with the stabilizing and low-carbon properties of the aza-allyl ligand system, achieving both thermal stability and reduced carbon contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of aza-allyl ligands in metal coordination complexes provides stable precursors that effectively deposit low-carbon films, addressing thermal stability and contamination issues in semiconductor and microelectronics applications.
Implementation Method 1
the precursors have good thermal stability
Implementation Method 2
metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand
Data Source
AI summary
Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by:where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.