Back Contact Solar Cell Manufacturing via Selective Etching
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Solution Overview
Problem
The existing method for manufacturing back contact solar cells is time-consuming due to the lengthy process of removing the covering layer using etching, and it is difficult to ensure complete removal of the layer.
Innovation Solution
A method involving the formation of a semiconductor substrate with a first semiconductor region and an insulation layer, where a second semiconductor layer is formed over the substrate, and electrodes are created using transparent conductive oxide and metal layers, allowing for selective etching to expose the semiconductor regions for electrode formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the covering layer is removed using etching in the conventional method, then the back contact solar cell can be manufactured, but the manufacturing process becomes time-consuming and it is difficult to ensure complete removal
Solution Approach 1:
The patent changes the material parameter of the covering layer from conventional materials to a material that can be selectively removed by a specific etching solution. This parameter change enables complete and controlled removal of the covering layer without affecting other structures, resolving both the completeness issue and reducing manufacturing time through selective etching
Solution Approach 2:
The patent introduces a specific etching solution as an intermediary that selectively removes the covering layer. This intermediary enables precise control over the removal process, ensuring complete removal while preventing damage to underlying structures, thereby improving manufacturing precision and reducing time
2Ease of manufacture
If the covering layer is removed with etching, then the electrode can be formed on the semiconductor region, but the process requires long time and may not certainly remove the layer
Solution Approach 1:
The patent applies preliminary action by forming the covering layer with specific material properties before electrode formation. This preliminary design of the covering layer enables it to be easily and completely removed by a specific etching solution, making the subsequent electrode formation process easier and faster without compromising completeness
3Reliability
If conventional etching method is used to remove covering layer, then the solar cell can be manufactured, but manufacturing efficiency is reduced due to long processing time
Solution Approach 1:
The patent replaces the conventional mechanical or chemical etching system with a selectively designed chemical etching system that targets specific material properties. This substitution enables rapid and reliable removal of the covering layer, improving both reliability of removal and manufacturing productivity simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient and rapid manufacturing of back contact solar cells with high photoelectric conversion efficiency by simplifying the electrode formation process and reducing manufacturing time.
Implementation Method 1
a first conductive layer made of transparent conductive oxide is formed by a sputtering method
Implementation Method 2
a first conductive layer made of transparent conductive oxide is formed by a CVD method
Implementation Method 3
a second conductive layer made of metal or an alloy is formed by a plating method
Data Source
AI summary
Provided is a method capable of easily manufacturing a back contact solar cell with high photoelectric conversion efficiency. A semiconductor layer having a first conductivity which is the same as that of a semiconductor substrate is formed substantially entirely on the principal surface of the semiconductor substrate inclusive of a surface of an insulation layer. A portion of the semiconductor layer located on the insulation layer is removed, and thereby an opening is formed. The insulation layer exposed through the opening is removed while the semiconductor layer is used as a mask, and thereby a surface of a first semiconductor region is partially exposed. Electrodes which are electrically connected to the surface of the first semiconductor region and to a surface of the semiconductor layer respectively are formed.