Back Contact Solar Cell Stack Region for Hot Spot Inhibition
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Solution Overview
Problem
Solar cell modules experience a hot spot phenomenon when shadowed, leading to reduced voltage generation and efficiency, as reverse voltage is applied to other cells.
Innovation Solution
A back contact solar cell design featuring a semiconductor substrate with alternating n-type and p-type regions and a stack region where the p/i/n/i/n semiconductor structure is formed, acting as a current leak path to inhibit the hot spot phenomenon.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a back contact solar cell design is used to improve light-receiving efficiency, then light-receiving efficiency is improved, but the hot spot phenomenon occurs under shadowed conditions
Solution Approach 1:
The semiconductor substrate is divided into multiple independent regions with different conductivity types (n-type and p-type regions) arranged in an alternating pattern. This segmentation allows each region to function independently, and when shadowing occurs, only the affected region experiences reverse bias while other regions continue to generate power, preventing the hot spot phenomenon.
Solution Approach 2:
Different regions of the semiconductor substrate are assigned different conductivity types (n-type or p-type) to create local quality variations. This enables each region to have optimized electrical characteristics for its specific function, and under reverse bias conditions, the local properties of each region help dissipate reverse voltage differently, preventing hot spot formation.
2Reliability
If alternating n-type and p-type regions are formed on the semiconductor substrate, then the hot spot phenomenon is inhibited, but device complexity increases
Solution Approach 1:
Multiple functional regions (n-type regions, p-type regions, and stack regions) are merged into a single integrated semiconductor substrate structure. The alternating arrangement allows these different conductivity type regions to coexist and interact within one device, achieving hot spot inhibition without requiring separate components or complex external circuitry.
Solution Approach 2:
The semiconductor substrate serves multiple functions simultaneously: it acts as the base for both n-type and p-type regions, provides the stack region structure, and inherently prevents hot spot phenomenon through its alternating conductivity type design. This multi-functionality reduces the need for additional components and simplifies the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively prevents the hot spot phenomenon by turning into a current leak path under reverse bias voltage, enhancing the solar cell's power generation efficiency and reliability.
Implementation Method 1
A solar cell of an embodiment includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type
Data Source
AI summary
A solar cell includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type, including a semiconductor layer structure of the second conductivity type provided on the first principal surface. The semiconductor layer structure of the first conductivity type is formed extending into the region of the second conductivity type. Thereby the solar cell is provided with a stack region where the semiconductor layer structure of the second conductivity type is formed on the semiconductor layer structure of the first conductivity type.