Back-Gate Biasing Voltage Divider Circuit Structure
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Solution Overview
Problem
Existing voltage divider circuit topologies for transistors with back-gate terminals require power-consuming charge pumps to generate high and low back-gate bias voltages, which increase area and power consumption, diminishing the benefits of body-biasing for circuits with low operating voltages.
Innovation Solution
A circuit structure that includes a back-gate biasing voltage regulator configured to supply transistors with biasing voltages different from the available voltage levels, using a digital-to-analog converter and buffer to regulate voltages within the voltage divider topology, reducing the need for charge pumps and minimizing power and area consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charge pumps are used to generate high and low back-gate bias voltages, then back-gate biasing function is achieved, but power consumption and area increase
Solution Approach 1:
The patent extracts the charge pump components from the back-gate biasing system and replaces them with voltage regulators that draw power from existing voltage divider nodes. This removes the power-consuming charge pumps while maintaining the back-gate biasing function through alternative voltage regulation mechanisms.
Solution Approach 2:
The patent makes the voltage regulator serve multiple functions: it regulates voltage for back-gate biasing while also utilizing existing voltage divider nodes for power supply. This multi-functionality eliminates the need for dedicated charge pump circuits, reducing overall power consumption while maintaining biasing functionality.
2Reliability
If charge pumps are used to generate high and low back-gate bias voltages, then back-gate biasing function is achieved, but circuit area increases
Solution Approach 1:
The patent removes the charge pump circuits from the design, extracting this unnecessary component while retaining the essential back-gate biasing function through voltage regulators connected to existing voltage divider nodes, thereby reducing circuit area.
Solution Approach 2:
The patent merges the voltage regulation function with the existing voltage divider structure. Instead of adding separate charge pump circuits, the voltage regulator is integrated with the voltage divider nodes already present in the circuit, combining functions and reducing overall area.
3Ease of operation
If voltage division topology is used to power operational elements, then voltage levels are controlled, but back-gate biasing voltages cannot exceed operational voltage
Solution Approach 1:
The patent introduces voltage regulators as intermediary components between the voltage divider nodes and the back-gate terminals. These regulators act as mediators that can generate higher voltages than the operational voltage by drawing from multiple voltage divider nodes, thus expanding the back-gate biasing voltage range while maintaining controlled voltage levels.
Solution Approach 2:
The patent changes the voltage parameter available to back-gate terminals by using regulators that can output voltages exceeding the operational voltage. This parameter change allows back-gate biasing to achieve higher voltage levels without being constrained by the operational voltage of the voltage division topology.
Data Source
AI summary
Embodiments of the present disclosure provide a circuit structure including: a first tap node, a first operational element coupled to the first tap node, the first operational element including at least one transistor having a back-gate, a second tap node coupled to the first operational unit, a second operational element coupled to the second tap node, the second operational element including at least one transistor having a back-gate, and a first back-gate biasing voltage regulator coupled to the second operational element and the first tap node. The first back-gate biasing voltage regulator is configured to supply the at least one transistor of the second operational element with a back-gate biasing voltage level that is different than a voltage level available to the second operational element from the second tap node.