Back-Gate Semiconductor Circuit for Leakage and Threshold Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Metal oxides used as p-type semiconductors in semiconductor devices face challenges in terms of mobility and reliability, leading to increased leakage current and unstable operation of n-channel transistors, which affects the performance of semiconductor devices.
Innovation Solution
A semiconductor device is designed with a specific configuration of multiple transistors and capacitors connected in various electrical and functional configurations, including multi-gate structures, to stabilize the threshold voltage and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If metal oxides (In oxide, Zn oxide) are used as n-type semiconductors in channel formation regions, then the manufacturing process is simplified and productivity is improved, but the threshold voltage becomes unstable and leakage current increases
Solution Approach 1:
The patent applies parameter changes by introducing a back gate voltage to actively control and adjust the threshold voltage of the transistor. By varying the back gate voltage, the threshold voltage can be stabilized despite variations in the n-type semiconductor material properties, thus resolving the instability issue while maintaining the use of simple n-type materials for manufacturing
Solution Approach 2:
The patent implements a feedback mechanism where the back gate voltage is adjusted based on the actual threshold voltage requirements. This feedback control allows the system to compensate for leakage current and threshold voltage variations dynamically, ensuring stable transistor operation while maintaining manufacturing simplicity
2Ease of manufacture
If a single-polarity circuit with n-channel transistors is used, then ease of manufacture is improved, but device complexity increases due to threshold voltage control requirements
Solution Approach 1:
The back gate structure serves multiple functions: it controls the threshold voltage, adjusts the on-state current, and compensates for leakage current. This multi-functionality allows a single structural element to address multiple issues, reducing the need for additional complex control mechanisms while maintaining ease of manufacture
Solution Approach 2:
By utilizing the back gate to dynamically change the threshold voltage parameter, the patent simplifies the overall device structure compared to using complex multi-gate transistor configurations. The parameter adjustment through back gate voltage provides a straightforward control mechanism that reduces device complexity
Data Source
AI summary
A semiconductor device includes first to tenth transistors and first to fourth capacitors. Gates of the first and the fourth transistors are electrically connected to each other. First terminals of the first, second, fifth, and eighth transistors are electrically connected to a first terminal of the fourth capacitor. A second terminal of the fifth transistor is electrically connected to a gate of the sixth transistor and a first terminal of the second capacitor. A second terminal of the eighth transistor is electrically connected to a gate of the ninth transistor and a first terminal of the third capacitor. Gates of the second, seventh, and tenth transistors are electrically connected to first terminals of the third and fourth transistors and a first terminal of the first capacitor. First terminals of the sixth and seventh transistors are electrically connected to a second terminal of the second capacitor.