Back Gate Insulating Structure for Dense Semiconductor Memory
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Solution Overview
Problem
Existing semiconductor memory devices face limitations in integration density and electrical characteristics due to the need for high-priced apparatuses to form fine patterns, which restricts their performance and capacity.
Innovation Solution
The semiconductor memory device incorporates a design with bit lines, active patterns, and back gate electrodes, utilizing different dielectric materials for insulating patterns to enhance integration density and reduce noise, including low-k dielectric materials for the back gate upper insulating pattern and higher dielectric materials for the lower insulating pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If fine patterns are formed to increase integration density, then data storage capacity increases, but manufacturing cost increases and manufacturing complexity increases
Solution Approach 1:
The gate insulating layer is segmented into multiple distinct layers with different dielectric constants. The first gate insulating layer has a higher dielectric constant than the second gate insulating layer, allowing each layer to contribute differently to charge storage and control, thereby achieving high integration density without requiring extremely fine single-layer patterning
Solution Approach 2:
The gate insulating structure uses composite materials with different dielectric properties arranged in specific configurations. This composite approach enables effective charge control and high integration density while using conventional manufacturing processes, avoiding the need for expensive fine-patterning equipment
2Quantity of substance
If fine patterns are formed to increase integration density, then data storage capacity increases, but device complexity increases
Solution Approach 1:
The gate insulating layer is divided into multiple segments (first and second gate insulating layers) with different dielectric constants, positioned at different locations relative to the semiconductor region. This segmentation allows for controlled charge distribution and simplified manufacturing compared to forming extremely fine single-layer patterns
Solution Approach 2:
Different regions of the gate insulating structure have different dielectric qualities - the first gate insulating layer has a higher dielectric constant than the second. This local differentiation optimizes electrical characteristics while maintaining manufacturability through conventional processes
3Ease of manufacture
If conventional gate insulating structures are used, then manufacturing is simpler, but leakage currents increase and electrical characteristics deteriorate
Solution Approach 1:
The gate insulating structure employs composite materials with different dielectric constants arranged in a multi-layer configuration. This composite structure reduces leakage currents and improves electrical characteristics while remaining compatible with conventional manufacturing processes, avoiding the need for complex fine-patterning equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves integration density and reduces noise, enhancing the electrical characteristics and performance of the semiconductor memory device.
Implementation Method 1
the back gate upper insulating pattern may include a material having a first dielectric constant and the back gate lower insulating pattern may include a material having a second dielectric constant that is greater than the first dielectric constant
Data Source
AI summary
A semiconductor memory device includes a substrate, a bit line on the substrate, word lines provided on the bit line and spaced apart in a first direction parallel to a top surface of the substrate, a back gate electrode provide between a pair of adjacent word lines among the word lines, active patterns provided between the back gate electrode and the pair of adjacent word lines, contact patterns respectively provided on the active patterns, a first back gate insulating pattern provided between the bit line and the back gate electrode, and a second back gate insulating pattern and a third back gate insulating pattern which are provided on the back gate electrode, where the back gate upper insulating pattern includes a material having a first dielectric constant and the back gate lower insulating pattern includes a material having a second dielectric constant that is greater than the first dielectric constant.