Back Side Conductive Structure for Semiconductor Chip Warpage Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor technologies face challenges in preventing deformation, such as warpage, of thin semiconductor chips during mounting and operation, which affects the reliability and performance of electronic devices.
Innovation Solution
The implementation of a semiconductor device with a substrate having through-via structures and a back side conductive structure that includes parallel supporter portions and a middle supporter portion, which are electrically insulated from the signal I/O through-via structures and provide mechanical support to prevent warpage and facilitate heat radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If thin semiconductor chips are used to achieve lightweight and small-sized electronic devices, then the device size and weight are reduced, but the chips become prone to deformation and warpage during mounting and operation
Solution Approach 1:
The patent applies local quality by providing supporter portions at specific locations on the back side of the chip (opposite the circuit regions) rather than uniformly across the entire chip. These localized supporter portions are positioned to provide mechanical support where needed to prevent warpage, while maintaining the thin overall chip profile. The supporter portions have different properties (greater thickness) than the main chip body, creating local structural enhancement.
Solution Approach 2:
The patent employs composite material structure by combining the thin semiconductor chip material with supporter portions made of the same or different material but with greater thickness. This creates a composite structure where the thin chip provides electrical functionality while the thicker supporter portions provide mechanical strength and flatness, resolving the contradiction between thinness and stability.
2Length of moving object
If the chip thickness is reduced to achieve thin-profile devices, then the device becomes more compact, but the mechanical strength and resistance to deformation decrease
Solution Approach 1:
The patent applies local quality by providing supporter portions at specific locations on the back side of the chip (opposite the circuit regions) rather than uniformly across the entire chip. These localized supporter portions are positioned to provide mechanical support where needed to prevent warpage, while maintaining the thin overall chip profile. The supporter portions have different properties (greater thickness) than the main chip body, creating local structural enhancement.
Solution Approach 2:
The patent employs composite material structure by combining the thin semiconductor chip material with supporter portions made of the same or different material but with greater thickness. This creates a composite structure where the thin chip provides electrical functionality while the thicker supporter portions provide mechanical strength and flatness, resolving the contradiction between thinness and stability.
3Stability of the object's composition
If a back side conductive structure with supporter portions is added to prevent warpage, then the chip stability is improved, but the device complexity increases
Solution Approach 1:
The patent merges multiple functions into the back side conductive structure. The supporter portions serve dual purposes: they provide mechanical support to prevent warpage and simultaneously function as conductive elements for electrical connections. This integration reduces the need for separate mechanical support structures, thereby reducing overall device complexity despite adding functional capabilities.
Solution Approach 2:
The back side conductive structure with supporter portions exhibits multi-functionality by simultaneously providing mechanical support (preventing warpage), electrical conduction (signal transmission), and structural framework. This universal design eliminates the need for separate components for each function, reducing overall device complexity while achieving multiple objectives.
Data Source
AI summary
Provided are a semiconductor device, a semiconductor package, and an electronic system. The device includes a substrate having a front side and a back side disposed opposite the front side. An internal circuit is disposed on or near to the front side of the substrate. Signal I/O through-via structures are disposed in the substrate. Back side conductive patterns are disposed on the back side of the substrate and electrically connected to the signal I/O through-via structures. A back side conductive structure is disposed on the back side of the substrate and spaced apart from the signal I/O through-via structures. The back side conductive structure includes parallel supporter portions.


