Back-Side High-Withstand-Voltage IC for Motor Vehicle Ignition
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Solution Overview
Problem
Conventional semiconductor apparatuses for motor vehicle engine ignition systems face challenges in reducing the size of the control circuit and the entire package due to high voltage generation on the electroconductive member, which complicates the integration of power semiconductor devices and integrated circuit semiconductor devices.
Innovation Solution
The semiconductor apparatus features a back-side high-withstand-voltage integrated circuit on the electroconductive member, separate from the switching device, with a control circuit for controlling the switching device, and an insulating substrate with passive elements, allowing for improved thermal coupling and reduced size through high-density mounting and elimination of unnecessary components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the integrated circuit semiconductor device is formed on the insulating substrate to operate at low voltage, then the power semiconductor device can be controlled, but the size of the control circuit and the entire package cannot be reduced
Solution Approach 1:
The patent moves the integrated circuit semiconductor device from the insulating substrate to the electroconductive member (back side mounting), utilizing a different spatial dimension and plane for component placement. This dimensional repositioning allows the control circuit to operate directly at high voltage potential, eliminating the need for voltage conversion circuits and reducing overall package size.
2Object-affected harmful factors
If the integrated circuit semiconductor device is formed on the insulating substrate, then separation from high voltage is achieved, but functionality and packaging density are compromised
Solution Approach 1:
The patent applies local quality by providing electrical insulation only at specific locations where needed (through the insulating substrate and wiring structures) rather than requiring complete isolation. This allows the integrated circuit to be mounted on the electroconductive member with localized insulation measures, achieving both high voltage compatibility and high packaging density.
Data Source
AI summary
A semiconductor apparatus includes an electroconductive member; a switching device electrically connected to the electroconductive member on the electroconductive member and having a withstand voltage between a front side and a back side as a first withstand voltage; a back-side high-withstand-voltage integrated circuit provided on the electroconductive member separately from the switching device, incorporating a control circuit for controlling turning-on/off of the switching device, and having a withstand voltage between a front side and a back side as a second withstand voltage higher than the first withstand voltage; an insulating substrate provided on the electroconductive member separately from the switching device and the back-side high-withstand-voltage integrated circuit; input/output wiring connected to the insulating substrate; first wiring connecting the insulating substrate and the switching device; and second wiring connecting the insulating substrate and back-side high-withstand-voltage integrated circuit.