Back-to-Back Substrate Processing in Reduced Chamber Space
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Solution Overview
Problem
Current manufacturing processes for thin-film solar modules, particularly those using chalcopyrite semiconductors, are inefficient and costly due to complex and costly investment requirements for thermal processing systems, which need improved process engineering for faster heating rates, homogeneous temperature distribution, and controlled gas supply.
Innovation Solution
A process box forms a reduced chamber space that allows for dual-substrate back-to-back rapid thermal processing (RTP) of multi-layer bodies, enabling simultaneous processing of two substrates with controlled heating and gas supply, reducing system footprint and investment costs while maintaining high efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional single-substrate thermal processing is used, then processing quality is maintained, but system throughput is low and investment costs are high
Solution Approach 1:
The patent combines two separate substrate processing operations into a single integrated process box. Two substrates are positioned back-to-back and processed simultaneously in one chamber, effectively doubling throughput while using a single processing unit rather than two separate systems.
Solution Approach 2:
The patent transitions from processing substrates in a single-file sequence to a three-dimensional stacked arrangement where substrates are positioned vertically back-to-back. This spatial reconfiguration allows simultaneous exposure to heating elements from both directions, enabling parallel processing without increasing horizontal footprint.
2Loss of time
If rapid thermal processing with high heating rates is implemented, then processing time is reduced, but temperature distribution homogeneity becomes difficult to control
Solution Approach 1:
The patent employs asymmetric heating arrangements with heating elements positioned on opposite sides of the process box, allowing differential heating rates and temperature profiles for each substrate. This enables independent optimization of heating speed and temperature uniformity for each substrate during simultaneous processing.
Solution Approach 2:
The system dynamically adjusts heating parameters including power distribution, heating rate, and temperature setpoints during the processing cycle. By modifying these parameters in real-time based on substrate position and material properties, the system achieves rapid heating while maintaining homogeneous temperature distribution across both substrates.
3Loss of substance
If process chamber volume is reduced to minimize gas usage, then gas consumption and evaporation are reduced, but access for gas supply and substrate handling becomes limited
Solution Approach 1:
The process box is designed as a nested structure with gas supply channels and substrate handling mechanisms integrated within the compact chamber. Gas distribution manifolds are positioned to deliver process gas directly to the substrate surfaces through carefully designed flow paths, maximizing gas efficiency while maintaining adequate access for controlled gas supply.
4Productivity
If dual-substrate back-to-back processing is implemented, then throughput doubles, but device complexity for positioning and handling increases
Solution Approach 1:
The substrates are positioned back-to-back in a self-supporting configuration where each substrate serves as a structural element for the other. This mutual support arrangement simplifies the positioning mechanism by eliminating the need for complex external fixtures, as the substrates themselves provide stability and alignment during processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach doubles system throughput with minimal additional investment, achieving faster processing times and improved efficiency by allowing direct and controlled heating of substrates with reduced gas usage and evaporation, applicable to various functional thin films beyond chalcopyrite semiconductors.
Implementation Method 1
rapid heating rates in the range of a few Kelvin/s, homogeneous temperature distribution across the glass substrate (laterally) and across the substrate thickness
Implementation Method 2
The process chamber, for example, has or forms a tunnel that can be sealed with airlocks, or is designed as a closed process chamber. The process chamber is irradiated with energy sources, such as matrix-arranged radiators, for heating.
Implementation Method 3
a device for positioning at least two multilayer bodies, each with a surface to be processed, wherein the device for positioning the at least two multilayer bodies, each with a surface to be processed, is designed such that the multilayer bodies face each other and the surfaces to be processed are oriented away from each other
Implementation Method 4
ensuring a sufficiently high, controllable, and reproducible partial pressure of the chalcogen elements (Se and/or S) during the RTP (avoiding Se and/or S losses or losses of other applied elements)
Implementation Method 5
During this annealing process, the desired chalcopyrite semiconductor is formed from the precursor layers in a complex phase transformation
Data Source
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AI summary
The invention relates to a device for forming a reduced chamber space, such as a process box or a process hood, comprising an apparatus for positioning at least two multilayer bodies each having at least one surface to be processed, wherein the apparatus is designed so that the multilayer bodies are opposite each other, wherein the surfaces to be processed are facing away from each other, so that the multilayer bodies can be processed as a multilayer body arrangement in a processing system. The invention further relates to a method for positioning at least two multilayer bodies each having at least one surface to be processed, according to which method the two multilayer bodies are arranged in such a device for forming a reduced chamber space, such that the multilayer bodies are opposite each other, wherein the surfaces to be processed are facing away from each other, so that the at least two objects can be processed as a multilayer body arrangement in a processing system.