Backend Layer Thermoelectric Cooler for Fast Turbo Cooling
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Solution Overview
Problem
Existing semiconductor cooling solutions are slow to respond during turbo power scenarios due to the distance between silicon dies and heat sink components, limiting burst duration and performance.
Innovation Solution
Integration of solid state thermoelectric coolers (TECs) within the backend layers of semiconductor packages, close to the heat generation source, to provide immediate cooling and reduce reaction time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If traditional cooling solutions with heat sink components are used, then cooling capacity is provided, but response time is slow due to distance from silicon die
Solution Approach 1:
The patent transitions from a distant, separate cooling architecture to an integrated cooling solution embedded within the silicon die itself. By incorporating thermoelectric cooler elements directly into the backend layers of the silicon die, the cooling function moves from a spatially separated component to an integrated feature, effectively reducing the thermal path length to near-zero and enabling immediate cooling response during turbo scenarios.
Solution Approach 2:
The thermoelectric cooler elements are nested within the backend layers of the silicon die structure. This nested integration allows the cooling elements to be positioned directly adjacent to the heat-generating regions, eliminating the need for separate heat sink components and thermal interface materials, thereby achieving the fastest possible thermal response.
2Temperature
If silicon die size is increased to provide more cooling area, then cooling capacity improves, but device area increases
Solution Approach 1:
Instead of uniformly increasing the overall device area, the patent applies cooling elements locally at the backend layers where heat generation occurs. This localized approach provides targeted cooling capacity exactly where needed, maximizing thermal management efficiency without increasing the footprint of the silicon die or overall device area.
3Productivity
If turbo power scenarios are extended for higher performance, then processing speed improves, but thermal management becomes difficult
Solution Approach 1:
The thermoelectric coolers are pre-integrated into the backend layers of the silicon die, ready to activate immediately when turbo scenarios begin. This preliminary integration eliminates thermal response delays, allowing the system to extend turbo power scenarios for longer durations at higher performance levels without suffering from thermal management limitations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables longer and more powerful turbo bursts with improved thermal management, enhancing performance and reducing Joule heating penalties by directing heat from hot spots to larger regions efficiently.
Implementation Method 1
a TEC in the plurality of backend layers of the die, wherein the TEC includes a plurality of N-type layers, a plurality of P-type layers
Data Source
AI summary
Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.