Back-End Semiconductor Structure With Stable P-Type Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional back-end transistors in semiconductor devices are predominantly n-type, with p-type transistors being rare and unstable, leading to reliability issues.
Innovation Solution
Incorporating p-type transistors with stable channel materials like germanium or copper oxide in the back-end of semiconductor devices, alongside n-type transistors, to enhance stability and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If p-type transistors are used in back-end of semiconductor devices, then device complexity and functionality are improved, but stability and reliability deteriorate due to instability of p-type transistors
Solution Approach 1:
The patent changes the material parameter of the channel layer from conventional unstable p-type materials to copper oxide (CuO) or copper sub-oxide (Cu2O), which exhibit stable p-type semiconductor characteristics. This material substitution transforms the electrical and structural parameters of the transistor channel, enabling reliable p-type transistor operation in back-end applications while maintaining device functionality.
Solution Approach 2:
The patent employs composite material structures where copper oxide or copper sub-oxide channel layers are integrated with gate dielectric layers and electrode structures. This composite approach combines the stable p-type semiconductor properties of copper oxides with the insulating and conductive properties of adjacent layers, achieving both functional versatility and operational reliability in the transistor device.
2Reliability
If stable p-type transistors are integrated into back-end, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the transistor structure into distinct functional layers: gate electrode, gate dielectric, and copper oxide channel layer. This segmentation allows each layer to be optimized independently for its specific function while maintaining overall device reliability. The clear layer boundaries facilitate both manufacturing processes and device performance optimization.
Solution Approach 2:
The copper oxide channel layer serves multiple functions simultaneously: it provides stable p-type semiconductor behavior for transistor operation, enables reliable electrical conduction when activated, and maintains structural integrity within the multi-layer device architecture. This multi-functionality reduces the need for additional specialized components, managing complexity while enhancing reliability.
Data Source
AI summary
A semiconductor device includes a substrate, and a first transistor disposed on the substrate. The first transistor includes a first channel layer, a magnesium oxide layer, a first gate electrode, a first gate dielectric and first source/drain electrodes. A crystal orientation of the first channel layer is <100> or <110>. The magnesium oxide layer is located below the first channel layer and in contact with the first channel layer. The first gate electrode is located over the first channel layer. The first gate dielectric is located in between the first channel layer and the first gate electrode. The first source/drain electrodes are disposed on the first channel layer.