Backside Active Interconnects for Wafer-Scale Die Routing

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Solution Overview

Problem

Traditional semiconductor processing faces challenges in achieving high-density circuits with small features due to manufacturing constraints, leading to defective dies and inefficiencies in interconnect circuitry, particularly in achieving active switching between dies in full wafer devices.

Innovation Solution

Incorporating active interconnect layers with transistors on the backside of a full wafer device, allowing for active switching and improved signal routing between dies, which includes forming transistors in the global interconnect layers and using thin-film transistors over an interconnect layer, along with layer transfer of single-crystal material for enhanced performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If traditional semiconductor processing is used to scale features to smaller sizes, then increased density of functional units is achieved, but manufacturing constraints lead to defective dies and reduced reliability

Engineering Contradiction:
Improvedensity of functional unitsVSAvoiddefect rate
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The wafer is divided into multiple independently functional dies that can be tested and selected individually. Each die operates as an independent computational unit, allowing defective dies to be identified and excluded without affecting the functionality of other dies on the same wafer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the operational parameters by applying voltage to select only functional dies for active participation in computation. This electrical parameter control enables dynamic activation of reliable dies while excluding defective ones, thereby maintaining high system reliability despite manufacturing defects.

Inventive Principle:
Principle #35Parameter changes

2Power

If multiple dies are interconnected to achieve wafer-scale integration, then computing power is enhanced, but interconnect circuitry becomes complex and signal transmission control becomes difficult

Engineering Contradiction:
Improvecomputing powerVSAvoidinterconnect circuitry complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The interconnect circuitry is made dynamic through the use of selectable interconnect structures that can be activated or deactivated based on the functional status of dies. This dynamic configuration allows the system to adapt the interconnect topology to match the actual operational requirements, simplifying the effective complexity while maintaining high computing power.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system performs self-configuration by automatically selecting functional dies and activating appropriate interconnect paths without external intervention. The interconnect circuitry self-adapts to the operational state of the dies, reducing the need for complex external control mechanisms.

Inventive Principle:
Principle #25Self-service

3Ease of manufacture

If passive interconnect structures are used in full wafer devices, then manufacturing is simplified, but active switching between dies cannot be achieved

Engineering Contradiction:
Improveinterconnect fabrication simplicityVSAvoidsignal routing control capability
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The interconnect structures are pre-configured during manufacturing with selective activation capability. While the physical interconnects are formed using simplified processes, they are designed with built-in selection mechanisms that enable active switching during operation, combining manufacturing simplicity with operational versatility.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The interconnect structures serve multiple functions: they provide both physical signal transmission pathways and active switching capability through voltage-controlled selection. This multi-functionality allows the same interconnect infrastructure to support both simplified manufacturing requirements and complex signal routing control.

Inventive Principle:
Principle #6Universality (Multi-functionality)

4Productivity

If all dies on a wafer are utilized to maximize capacity, then productivity increases, but defective dies reduce overall reliability

Engineering Contradiction:
Improvedevice capacityVSAvoidfunctional die yield
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The system dynamically adjusts the number of active computational units based on die functionality testing results. Functional dies are activated to maximize productive capacity, while defective dies are excluded from operation. This dynamic activation ensures that productivity is optimized based on the actual functional yield of the wafer.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system incorporates feedback mechanisms through die functionality testing that inform the selection process. Test results provide feedback about which dies are functional, and this information is used to selectively activate only reliable dies for computational tasks, thereby maintaining high productivity with reliable operation.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20240088029A1Full wafer device with back side interconnects and wafer-scale integration
Publication Date: 2024.03.14 INTEL CORP
  • US20240088029A1 patent drawing
  • US20240088029A1 patent drawing
  • US20240088029A1 patent drawing

AI summary

Described herein are full wafer devices that include interconnect layers on a back side of the device. The backside interconnect layers couple together different dies of the full wafer device. The backside interconnect layers include an active layer that includes active devices, such as transistors. The active devices may act as switches, e.g., to control routing of signals between different dies of the full wafer device.