Backside and Bevel Deposition Chamber for Bow and Defect Reduction
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Solution Overview
Problem
Conventional processing systems are inadequate for simultaneously depositing materials on the backside and bevel edge of substrates, leading to substrate bowing, stress, and increased defect rates due to complex handling and potential particle exposure.
Innovation Solution
A processing system with a single chamber design capable of performing backside and bevel edge deposition, featuring a switchable ground electrode for plasma density control, lift pins for precise substrate handling, and independent gas flow zones for uniform heating and deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional processing systems are used for backside or bevel edge deposition, then film deposition can be performed, but additional handling between multiple specialized processing systems is required, introducing potential particle exposure and reducing processing yield
Solution Approach 1:
The patent combines backside deposition and bevel edge deposition capabilities into a single processing chamber. The chamber includes a substrate support structure with a backside deposition region and a bevel edge deposition region, allowing both types of film deposition to be performed sequentially on the same substrate without removing it from the chamber. This eliminates the need for handling between multiple specialized processing systems, reducing particle exposure and improving processing yield.
2Manufacturing precision
If multiple incremental processes are used to control critical dimensions, then precision can be maintained, but additional time is added for forming the devices and increases opportunities for defects
Solution Approach 1:
The patent performs backside deposition and bevel edge deposition in a single continuous process within one chamber, rather than using multiple separate incremental processes. The substrate is deposited on the backside first, then rotated to deposit on the bevel edge, allowing both operations to be completed sequentially without interruption. This reduces the total number of process steps and minimizes opportunities for defects while maintaining precision through controlled deposition parameters.
3Device complexity
If film deposition occurs on one side of the substrate, then the process is simple, but deposited layers build up stress that causes the substrate to undesirably bow
Solution Approach 1:
The patent applies preliminary anti-action by depositing film material on the backside of the substrate before depositing on the front side. The backside deposition creates counteracting stress that compensates for the stress introduced by front side deposition. This prevents substrate bowing from occurring in the first place, eliminating the need for subsequent correction steps and maintaining substrate flatness throughout the manufacturing process.
4Shape
If substrate bowing is corrected by depositing additional material on the backside and bevel edge, then substrate bowing and stress are counteracted, but conventional processing systems require multiple specialized chambers increasing complexity
Solution Approach 1:
The patent designs a universal processing chamber that can perform both backside deposition and bevel edge deposition functions. The chamber includes a substrate support structure with a backside deposition region and a bevel edge deposition region, along with a rotation mechanism that can orient the substrate to present either surface to the deposition source. This multi-functional design allows a single chamber to replace what would traditionally require multiple specialized chambers, reducing system complexity while maintaining the capability to correct substrate bowing through strategic material deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively addresses substrate bowing and stress by enabling simultaneous backside and bevel edge deposition, reducing handling-induced defects, and minimizing processing steps and time, thereby improving yield and reducing costs.
Implementation Method 1
Plasma may form on a backside of the substrate using the RF energized parts. The plasma provides energized particles under the raised substrate.
Implementation Method 2
Plasma may form on a backside of the substrate using the RF energized parts
Implementation Method 3
Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.
Data Source
AI summary
Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.