Backside-Biased Semiconductor Die Grounding via Wire Bonds
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Solution Overview
Problem
Backside-biased semiconductor devices experience unintended interactions and potential damage due to charge accumulation at the backside surface, which can be caused by the dielectric material between the active and backside surfaces, leading to undesirable behavior.
Innovation Solution
The implementation of a grounding mechanism, either through direct electrically conductive material or a grounding interposer, electrically connects the backside surface of the semiconductor die to ground, preventing charge accumulation by providing a path for unwanted charge to dissipate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If dielectric material is placed between active surface and backside surface, then device operates as capacitor with charge accumulation, but charge interacts with integrated circuitry causing unintended behavior or damage
Solution Approach 1:
The patent extracts and removes the accumulated charge from the backside surface through a grounding mechanism. A conductive path is established from the backside surface to ground, allowing the charge that accumulates in the dielectric material to be drained away, preventing it from interacting with the integrated circuitry on the active surface.
Solution Approach 2:
The patent introduces a grounding interposer or conductive structure as an intermediary between the backside surface and ground. This intermediary provides a controlled path for charge dissipation, mediating between the charge accumulation in the dielectric and the ground reference, thereby preventing harmful interactions with the active circuitry.
2Device complexity
If backside surface is left floating, then device structure is simple, but charge accumulates and causes unintended interactions
Solution Approach 1:
The patent implements a self-service grounding mechanism where the backside surface automatically dissipates its own accumulated charge through an integrated conductive path. The grounding structure is built into the device itself, allowing the backside surface to self-regulate its charge state without external intervention, thereby maintaining reliable operation.
3Reliability
If grounding mechanism is added to backside surface, then charge accumulation is prevented, but device complexity increases
Solution Approach 1:
The patent merges the grounding function with existing device structures. The grounding interposer or conductive path is integrated with the substrate or support structure already present in the device, combining multiple functions into a single element. This approach provides effective charge dissipation while minimizing the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the likelihood of unintended interactions and damage by ensuring that any accumulated charge is dissipated, thereby stabilizing the operation of the semiconductor device.
Implementation Method 1
electrically connects the backside surface of the semiconductor die to ground, preventing charge accumulation by providing a path for unwanted charge to dissipate
Data Source
AI summary
Semiconductor devices may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Methods of making semiconductor devices may involve supporting a backside-biased semiconductor die supported above a substrate, a backside surface of the backside-biased semiconductor die being spaced from the substrate. The backside surface may be electrically connected to ground by wire bonds extending to the substrate. Systems may include a sensor device, a nontransitory memory device, and at least one semiconductor device operatively connected thereto. The at least one semiconductor device may include a substrate and a backside-biased semiconductor die supported above the substrate. A backside surface of the backside-biased semiconductor die may be electrically connected to ground by wire bonds extending to the substrate.