Backside Capacitor Integration for Higher-Capacitance Semiconductors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices continue to integrate more components into a given area through reduced minimum feature sizes, challenges arise in efficiently utilizing space for capacitors, leading to potential performance limitations.
Innovation Solution
The solution involves bonding capacitors to the backside of transistor structures through hybrid bonding, allowing for the formation of larger capacitors without occupying front-side interconnect space, thereby enhancing device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If capacitors are formed on the front side of the semiconductor device, then the capacitance increases, but the available area for interconnect structures decreases
Solution Approach 1:
The patent applies dimensionality change by moving capacitor formation from the traditional front-side planar space to the backside surface of the semiconductor device. This utilizes the third dimension (depth/vertical space) by bonding capacitors to the opposite side of the substrate from the interconnect structures, effectively doubling the available space for passive components without compromising front-side interconnect area.
2Productivity
If minimum feature sizes are reduced to increase integration density, then more components can be integrated, but manufacturing precision requirements increase
Solution Approach 1:
The patent extracts capacitors from the front-side integrated circuit area and relocates them to the backside of the device. This separation allows the front side to focus exclusively on high-precision interconnect and transistor fabrication at reduced feature sizes, while capacitor formation on the backside operates independently with less stringent precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of capacitors with higher capacitance without area penalties, improving semiconductor device performance by optimizing space utilization.
Implementation Method 1
bonding capacitors to the backside of transistor structures through hybrid bonding
Data Source
AI summary
Semiconductor devices including backside capacitors and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including a front-side conductive line; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including a backside conductive line, the backside conductive line having a line width greater than a line width of the front-side conductive line; and a first capacitor structure coupled to the backside interconnect structure.