Backside Conductive Layer for Semiconductor Heat Dissipation
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Solution Overview
Problem
The cost-intensive process of packaging semiconductor chips is a significant challenge in manufacturing, particularly due to high costs associated with traditional dicing methods that do not efficiently manage heat dissipation and mechanical stress, leading to suboptimal yield and performance.
Innovation Solution
The method involves creating a semiconductor device with a structured backside conductive layer and polymer stripes on the wafer, which allows for selective thinning and improved heat dissipation by reducing electrical resistance, enabling faster heat transport and minimizing chip cracking during dicing through stealth dicing technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional dicing methods are used, then chip separation is achieved, but heat dissipation is poor and mechanical stress is high leading to suboptimal yield
Solution Approach 1:
The backside conductive layer is segmented into a grid pattern of conductive strips forming multiple conductive regions, which divides the heat dissipation function into multiple zones that can independently manage thermal loads from different chip regions
Solution Approach 2:
The conductive layer is configured with varying strip widths and spacing to create regions with different electrical and thermal conductivities, optimizing heat dissipation locally according to the heat generation distribution in the semiconductor chip
2Ease of manufacture
If conventional packaging processes are used, then chips are mounted on carriers, but the process is cost-intensive with high packaging costs
Solution Approach 1:
The backside conductive layer serves multiple functions simultaneously: it acts as an electrical contact layer, a heat dissipation structure, and a mechanical reinforcement element, eliminating the need for separate packaging components and reducing packaging complexity
Solution Approach 2:
The structured conductive layer on the chip backside performs multiple roles including electrical connection, thermal management, and structural support during dicing and packaging, reducing the number of separate components needed
3Strength
If stealth dicing is used with structured backside layers, then chip cracking is minimized, but the manufacturing process becomes more complex
Solution Approach 1:
The grid pattern of conductive strips is pre-configured on the chip backside before dicing to provide mechanical reinforcement and stress distribution, preventing crack propagation during the subsequent dicing process
Solution Approach 2:
The backside structure combines conductive material strips with the semiconductor substrate to create a composite structure that leverages the mechanical strength of the conductive material to prevent cracking during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces heat generation and enhances heat dissipation within semiconductor chips, improving manufacturing efficiency and yield while minimizing mechanical stress, thus addressing the cost and performance issues in packaging semiconductor devices.
Implementation Method 1
The conductive layer 18 may comprise a first metallization layer 22 and a bonding layer 26, wherein the bonding layer 26 comprises a bonding material configured to establish diffusion solder bonds
Implementation Method 2
the bonding layer 26 comprises a bonding material configured to establish diffusion solder bonds
Data Source
AI summary
A semiconductor device includes a semiconductor chip including a first main face and a second main face. The second main face is the backside of the semiconductor chip. The second main face includes a first region and a second region. The second region is a peripheral region of the second main face and the level of the first region and the level of the second region are different. The first region may be filled with metal and may be planarized to the same level as the second region.