Backside Conductive Structure for MOSFET Leakage Control
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Solution Overview
Problem
As semiconductor devices are scaled down, the operating characteristics of MOSFETs deteriorate due to high integration density, necessitating improved performance and reliability.
Innovation Solution
A semiconductor device design featuring a backside conductive structure that penetrates the substrate to connect source/drain patterns with a power distribution network layer, accompanied by a remaining pattern on the side surface of the conductive structure with a specific step configuration to prevent leakage current and enhance electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFET sizes are scaled down to increase integration density, then device quantity increases, but operating characteristics deteriorate
Solution Approach 1:
The patent introduces a vertical dimension by forming a conductive structure that penetrates through the substrate thickness direction, connecting source/drain regions to the power distribution network layer. This three-dimensional approach allows improved electrical connectivity without increasing lateral device density, thereby maintaining operating characteristics while supporting high integration through vertical rather than horizontal scaling.
2Reliability
If conventional substrate connection methods are used, then manufacturing is simpler, but electrical connectivity and power distribution efficiency are insufficient
Solution Approach 1:
The conductive structure is segmented into multiple regions with different cross-sectional areas along the thickness direction. The first region has a larger cross-sectional area than the second region, allowing optimized current distribution and reduced resistance in different substrate zones. This segmentation improves electrical connectivity while managing structural complexity through functional zoning.
Solution Approach 2:
The conductive structure exhibits varying properties at different locations: the first region near the source/drain patterns has a larger cross-sectional area for high current capacity, while the second region transitioning to the power distribution network has a smaller area. This local quality variation optimizes electrical performance at each specific location within the substrate.
Data Source
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Figure 2B
AI summary
A semiconductor device includes: a substate; a power distribution network layer disposed on a lower surface of the substrate; a source/drain pattern disposed on the substrate; a backside conductive structure configured to penetrate the substrate and to electrically connect the source/drain pattern and the power distribution network layer to each other; and a remaining pattern covering a side surface of an upper portion of the backside conductive structure.