Backside Conductive Structure for Scaled MOSFET Power Delivery
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Solution Overview
Problem
As semiconductor devices have been scaled down, the operating characteristics of MOSFETs have deteriorated, leading to challenges in achieving high integration density and increased performance.
Innovation Solution
A semiconductor device is designed with a substrate, a power distribution network layer, a source/drain pattern, a backside conductive structure that penetrates the substrate to electrically connect the source/drain pattern and the power distribution network layer, and a remaining pattern covering the backside conductive structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFET sizes are scaled down to increase integration density, then device quantity increases, but operating characteristics deteriorate
Solution Approach 1:
The patent introduces a backside conductive structure that penetrates the substrate vertically, adding a third-dimensional connection path. This allows power distribution to reach source/drain regions from the backside, effectively decoupling the horizontal scaling of MOSFETs from the power delivery mechanism, thereby maintaining operating characteristics even as device density increases through scaling.
Solution Approach 2:
The backside conductive structure acts as an intermediary element that bridges the power distribution network layer and the source/drain patterns through the substrate. This intermediate structure provides a dedicated power delivery path that is independent of the scaled-down MOSFET dimensions, ensuring stable power supply and maintained operating characteristics despite high integration density.
2Ease of manufacture
If conventional power distribution is used in scaled devices, then manufacturing remains simple, but leakage current increases and performance decreases
Solution Approach 1:
The patent segments the power distribution function into two independent parts: the power distribution network layer on the front side and the backside conductive structure penetrating the substrate. This segmentation allows each component to be optimized independently - the network layer maintains conventional simple manufacturing, while the backside structure specifically addresses leakage current control by providing isolated power paths to individual source/drain regions.
Solution Approach 2:
By moving the power delivery path to the vertical dimension through substrate penetration, the invention creates a three-dimensional power distribution architecture. This dimensional change enables precise control of power delivery to scaled devices without complicating the planar manufacturing processes, as the backside structure can be formed using standard vertical etching and filling techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described semiconductor device structure enhances electrical connectivity and reduces leakage current, thereby improving the performance and reliability of semiconductor devices with high integration density.
Implementation Method 1
a backside conductive structure configured to penetrate the substrate and to electrically connect the source/drain pattern and the power distribution network layer to each other
Data Source
AI summary
A semiconductor device includes: a substrate; a power distribution network layer disposed on a first surface of the substrate; a source/drain pattern disposed on the substrate; a backside conductive structure configured to penetrate the substrate and to electrically connect the source/drain pattern and the power distribution network layer to each other; and a remaining pattern covering a first surface of the backside conductive structure.