Backside Contact Structure for Precise IC Resistance Measurement
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Solution Overview
Problem
Existing integrated circuit devices face challenges in accurately measuring the resistance of conductive elements, which is crucial for evaluating and improving device performance.
Innovation Solution
The proposed solution involves resistance measuring structures that include a first and second transistor on a substrate structure, with conductive pads exposed on the back side of the substrate, allowing for electrical connection to source/drain regions and gate electrodes through contact structures extending through the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If contact structures extend through the substrate structure to expose conductive pads on the back side, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The contact structures extend through the substrate structure from the front side to the back side, utilizing the third dimension (depth/height) to establish electrical connections. This vertical extension allows measurement probes to access conductive pads on the back side of the substrate, enabling precise resistance measurements without adding lateral complexity to the device layout.
Solution Approach 2:
The contact structures serve as intermediary elements that bridge the measurement probes (external) and the conductive elements (internal to the device). By extending through the substrate, these contact structures provide a direct electrical pathway that mediates between the external measurement system and the internal conductive elements, enabling accurate resistance measurements.
2Adaptability or versatility
If multiple transistors and contact structures are integrated on the substrate, then measurement capability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The measurement structure is segmented into distinct functional components: first and second transistors with separate source/drain regions, multiple contact structures extending through the substrate, and conductive pads on the back side. This segmentation allows each component to be optimized and fabricated independently, reducing the cumulative precision requirements compared to a fully integrated monolithic structure.
Solution Approach 2:
By moving the conductive pads to the back side of the substrate and extending contact structures vertically through the substrate thickness, the design separates the measurement access points from the active transistor regions in the lateral plane. This dimensional separation reduces lateral alignment precision requirements while maintaining electrical connectivity.
Data Source
AI summary
Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter measuring structure may include first and second contact structures that extend through the substrate structure. The second surface of the substrate structure may expose respective portions of the first and second contact structures.