Backside Contact Layout for Dense Nanosheet Logic Structures

The patent transitions from planar contact formation to three-dimensional backside contact formation. By forming contacts on the backside of the substrate rather than on the front surface, the contact points are moved to a different spatial dimension, allowing devices to be placed closer together on the front surface without interfering with contact formation. This dimensional change resolves the spacing conflict between high device density and contact reliability.

The patent inverts the conventional contact formation approach by forming contacts on the backside of the substrate instead of on the front surface. This inversion allows contact pads to be positioned away from the active device regions, eliminating spacing conflicts and short circuits between adjacent components while maintaining ease of manufacturing through standard backside processing techniques.

The patent combines multiple processing steps into a unified backside contact formation process. By integrating contact pad formation, via etching, and metallization into a single backside processing sequence, the patent resolves spacing issues while minimizing the increase in device complexity. The merged process leverages standard semiconductor fabrication techniques that can be performed in existing manufacturing lines.