Backside Source/Drain Contacts With Protected Edge Regions
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, manufacturing defects and challenges arise during the formation of backside contacts for source/drain regions, particularly in nano-FETs, which affect integration density and reliability.
Innovation Solution
A method is introduced where a majority of the semiconductor substrate is etched away, leaving a portion to cover edge regions of the source/drain regions, allowing for the formation of backside contacts while protecting these regions, thereby reducing manufacturing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the minimum feature size is reduced to improve integration density, then more components can be integrated into a given area, but manufacturing defects and challenges arise during backside contact formation
Solution Approach 1:
The patent applies preliminary action by forming a protective layer on the source/drain regions before performing the etching process to remove the substrate. This protective layer is deposited in advance to prevent damage to the source/drain regions during subsequent manufacturing steps, thereby reducing manufacturing defects while enabling continued miniaturization for high integration density
2Productivity
If backside contacts are formed to improve device performance, then integration density increases, but source/drain regions may be damaged during the process
Solution Approach 1:
The patent implements beforehand cushioning by depositing a protective layer on the source/drain regions prior to the substrate removal process. This protective layer acts as a cushion that absorbs or prevents damage during the etching process, ensuring source/drain region integrity while enabling backside contact formation for improved integration density
3Ease of manufacture
If substrate is completely removed to form backside contacts, then contact formation is simplified, but source/drain regions become exposed and vulnerable to damage
Solution Approach 1:
The patent uses an intermediary approach by introducing a protective layer that remains in place during substrate removal. This protective layer serves as a mediator that allows the substrate to be removed for simplified backside contact formation while simultaneously protecting the source/drain regions from exposure and damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the integration density and reduces manufacturing defects by protecting the source/drain regions during the backside contact formation process, improving the overall performance and yield of semiconductor devices.
Implementation Method 1
a majority of the semiconductor substrate is etched away, leaving a portion to cover edge regions of the source/drain regions
Data Source
AI summary
A device includes a device layer comprising a first transistor and a second transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure comprising a first dielectric layer on the backside of the device layer, wherein a semiconductor material is disposed between the first dielectric layer and a first source/drain region of the first transistor; a contact extending through the first dielectric layer to a second source/drain region of the second transistor; and a first conductive line electrically connected to the second source/drain region of the second transistor through the contact.