Backside Decoupling Capacitors Using High-k Dielectrics
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, challenges arise in integrating more components into a given area while maintaining stable power supply lines and electrical ground lines, leading to inefficiencies in device performance and density.
Innovation Solution
The formation of decoupling capacitors using high-k dielectric materials in the interconnect structure on both the front and backside of semiconductor chips, which stabilizes power supply lines and electrical ground lines, reducing area usage and increasing device density by allowing for greater charge holding capacity with minimized size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional decoupling capacitors are used in semiconductor devices, then power supply lines and ground lines can be stabilized, but the device area increases and integration density decreases
Solution Approach 1:
The patent changes the dielectric constant parameter by using high-k dielectric materials (k>7.0) instead of conventional dielectric materials. This parameter change allows the capacitors to achieve the same capacitance value in a smaller physical area, thus stabilizing power supply lines while reducing device area and increasing integration density.
Solution Approach 2:
The patent employs composite material structures by integrating high-k dielectric materials with existing semiconductor interconnect structures. The decoupling capacitors are formed using combinations of high-k dielectric layers, conductive plates, and interconnect structures, creating a composite system that achieves both power supply stabilization and space efficiency.
2Productivity
If feature size is reduced to increase integration density, then more components can be integrated, but maintaining stable power supply lines and ground lines becomes difficult
Solution Approach 1:
By changing the dielectric constant parameter to high-k values, the patent enables the formation of effective decoupling capacitors with smaller physical dimensions. This allows more capacitors to be integrated in the same area, maintaining power supply stability even as feature sizes are reduced and integration density increases.
Solution Approach 2:
The patent utilizes vertical stacking of conductive plates and dielectric layers to create three-dimensional capacitor structures. This dimensional approach allows decoupling capacitors to be formed in the vertical dimension rather than only in the planar dimension, effectively increasing integration density while maintaining power supply stability at smaller feature sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves device performance by stabilizing power supply lines and ground lines, enabling higher integration density and efficient charge storage within a smaller footprint.
Implementation Method 1
the decoupling capacitors may be formed by filling spaces in between the power supply lines and the electrical ground lines with high-k dielectric materials
Implementation Method 2
high-k dielectric materials (e.g., dielectric materials having k-values greater than about 7.0)
Data Source
AI summary
Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.