Backside Decoupling Capacitors for Stable Power in Dense Semiconductors
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, they face challenges in integrating more components in a given area while maintaining stable power supply lines and electrical ground lines, leading to issues with device performance and density.
Innovation Solution
The formation of decoupling capacitors using high-k dielectric materials in the interconnect structure on both the front and backside of semiconductor chips, specifically routing power supply and ground lines through the backside interconnect structure and embedding decoupling capacitors between these lines to stabilize power supply and improve device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but maintaining stable power supply lines and ground lines becomes more difficult
Solution Approach 1:
The patent utilizes the backside of the semiconductor chip as an additional dimension for routing power supply and ground lines. By forming interconnect structures on both the front and back sides of the chip, the design provides separate dedicated paths for power and ground, preventing noise coupling and maintaining stability even as feature sizes are reduced and integration density increases.
Solution Approach 2:
The patent segments the power supply and ground routing into separate dedicated paths on the backside of the chip. Instead of sharing common interconnect lines, power lines and ground lines are physically separated and routed independently, which prevents electromagnetic interference and maintains signal integrity in high-density integration scenarios.
2Reliability
If decoupling capacitor size is increased to improve charge-holding capacity, then power supply stability improves, but device density decreases
Solution Approach 1:
The patent places decoupling capacitors on the backside of the chip in the backside interconnect structure, utilizing the third dimension (vertical depth) and the backside surface area. This allows decoupling capacitors to be positioned away from the active device area on the frontside, providing adequate charge-holding capacity without reducing device density on the chip's primary functional surface.
3Reliability
If decoupling capacitors are formed in the interconnect structure to stabilize power supply, then power supply stability improves, but manufacturing complexity increases
Solution Approach 1:
The patent merges the formation of decoupling capacitors with the existing backside interconnect structure fabrication process. The decoupling capacitors are formed as part of the same manufacturing sequence that creates the power and ground lines, utilizing the same dielectric layers and conductive fill processes, thereby avoiding additional manufacturing steps and complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances device performance by stabilizing power supply lines and ground lines, allowing for increased device density by minimizing the size of decoupling capacitors while maximizing their charge-holding capacity.
Implementation Method 1
formation of decoupling capacitors using high-k dielectric materials
Implementation Method 2
high-k dielectric materials
Data Source
AI summary
Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.