Backside Deposition Chamber for Wafer Bow Compensation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor processing tools are not suitable for backside deposition processes, as they often require flipping the substrate, which can damage the front side and are not designed to prevent particle deposition on the front side, and they struggle with managing substrate warpage by not providing effective stress compensation on the backside.
Innovation Solution
A semiconductor processing tool is designed with a chamber, pedestal, and dual gas feed systems that allow for controlled gas flow and plasma formation below the substrate to deposit films on the backside, preventing front-side damage and enabling uniform or non-uniform film deposition to manage substrate warpage, using a showerhead and lift pins to support the substrate and control gas distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If existing deposition tools are used for backside deposition, then deposition can be performed, but the substrate must be flipped which damages the front side and causes particle deposition on the front side
Solution Approach 1:
The patent inverts the deposition approach by depositing film on the backside of the substrate without flipping it. The substrate remains in its normal orientation with the front side facing upward, while deposition occurs from below through the pedestal and gas distribution assembly, thus avoiding all front-side damage and contamination risks associated with flipping.
Solution Approach 2:
The patent introduces a gas distribution assembly and dual gas feed system as intermediaries to deliver deposition gas to the backside of the substrate. The first gas feed system supplies process gas from the front side, while the second gas feed system supplies gas from the backside, creating a controlled environment that enables backside deposition without direct exposure of the front side to particles or damage.
2Manufacturing precision
If backside deposition is performed to compensate stress and correct warpage, then substrate flatness is improved, but existing tools lack the gas flow control needed for uniform film deposition
Solution Approach 1:
The gas feed system is segmented into two independent subsystems: a first gas feed system for supplying process gas from the front side through the pedestal, and a second gas feed system for supplying gas from the backside. Each system has its own exhaust line and valves, allowing independent control of gas flow rates and composition to achieve uniform film deposition while managing the complexity through modular design.
Solution Approach 2:
The patent employs parameter changes by controlling the flow rates, pressure, and composition of gases in both feed systems to optimize film deposition uniformity. By adjusting these parameters, the system can compensate for stress and correct substrate warpage to achieve the desired flatness while managing the complexity of the dual gas feed system.
3Manufacturing precision
If dual gas feed systems are implemented for controlled backside deposition, then uniform film deposition is achieved, but the device complexity increases
Solution Approach 1:
The dual gas feed system is designed with multi-functionality where the first gas feed system serves both front-side process support and backside deposition control, while the second gas feed system handles backside gas supply and exhaust. This universal design allows a single integrated system to perform multiple functions, reducing overall device complexity despite the sophisticated gas flow control requirements for uniform film deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The tool effectively deposits films on the backside of substrates without flipping, maintaining the front side's integrity and correcting warpage by providing controlled stress compensation, ensuring a flat substrate for further processing while preventing particle deposition on the front side.
Implementation Method 1
a pedestal in the chamber, where the pedestal is coupled to an RF source, and a plate over the pedestal, where the plate is coupled to an electrical ground
Implementation Method 2
deposit films on the backside of substrates
Data Source
AI summary
Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, a pedestal in the chamber, and a first gas feed system on a first side of the pedestal. In an embodiment, the first gas feed system comprises a first exhaust line with a first valve to open and close the first exhaust line, and a first source gas feed line with a second valve to open and close the first source gas feed line. In an embodiment, the semiconductor processing tool further comprises a second gas feed system on a second side of the pedestal. In an embodiment, the second gas feed system comprises a second exhaust line with a third valve to open and close the second exhaust line, and a second source gas feed line with a fourth valve to open and close the second source gas feed line.