Backside Dielectric Plug for Nanolayer Channel Disconnection
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Solution Overview
Problem
Conventional semiconductor IC devices face challenges in maintaining switching speeds and preventing current leakage as device dimensions shrink, particularly in transistors with nanolayer channels, which are difficult to isolate effectively.
Innovation Solution
The introduction of a backside dielectric plug that electrically isolates a portion of the channel from the source or drain region, converting active channels into faux channels, thereby reducing the number of active channels and enhancing electrical isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional isolation methods are used in transistors with nanolayer channels, then device density can be maintained, but current leakage increases and switching speeds deteriorate
Solution Approach 1:
The patent introduces a backside dielectric plug that extends from the backside surface of the semiconductor device into the substrate, creating a three-dimensional isolation structure. This approach utilizes the vertical dimension (depth from backside surface) to achieve electrical isolation of the nanolayer channels, thereby preventing current leakage without compromising device density or switching performance
2Speed
If the number of active channels is reduced to improve switching performance, then device complexity increases due to additional isolation structures
Solution Approach 1:
The backside dielectric plug serves multiple functions simultaneously: it provides electrical isolation of nanolayer channels, acts as a structural support element, and enables the conversion of active channels to faux channels for improved switching performance. This multi-functionality reduces the need for separate isolation structures, thereby managing device complexity while achieving performance goals
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves switching performance and reduces current leakage by effectively disconnecting channels, allowing for faster and more reliable transistor operation while maintaining device density.
Implementation Method 1
a backside dielectric plug that electrically isolates a portion of the channel from the source or drain region
Data Source
AI summary
A semiconductor integrated circuit (IC) device includes a first source/drain region that is connected to a second source/drain region by one or more active channels, a backside dielectric plug that is connected to the second source/drain region, and a faux channel that is connected to the first source/drain region and that is connected to the backside dielectric plug. The backside dielectric plug adequately electrically isolates the faux channel from the second source/drain region. The fabrication of the backside dielectric plug may be utilized to modify transistors within a first region of the semiconductor IC device relative to transistors within a second region semiconductor IC device.