Backside Dielectric Deposition for Semiconductor Warpage Compensation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Warpage in semiconductor devices due to mechanical property mismatches between layers leads to increased overlay errors during processing.
Innovation Solution
A method of film deposition that involves holding a semiconductor device by a holding component, forming a dielectric layer on its backside surface using reacting gases from a showerhead, and using a pedestal to provide neutral gases to prevent dielectric deposition on the active surface, allowing a single-step process without passivation layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dielectric layer is formed on the backside surface using conventional methods, then warpage can be compensated, but passivation layers must be deposited and removed which increases process complexity and time
Solution Approach 1:
The invention extracts and eliminates the unnecessary passivation layer deposition and removal steps from the conventional process. By directly forming the dielectric layer on the backside surface without requiring passivation layers, the process complexity is reduced while maintaining warpage compensation capability.
Solution Approach 2:
The invention inverts the conventional approach by forming the dielectric layer directly on the backside surface rather than requiring passivation layers first. This reversal of the process sequence eliminates redundant steps and simplifies the overall manufacturing process.
2Reliability
If passivation layers are deposited on the active surface to protect it, then the active surface is protected during processing, but passivation layer remnants and damage occur after removal
Solution Approach 1:
The invention removes the need for passivation layers entirely by forming the dielectric layer directly on the backside surface. This eliminates the harmful cycle of depositing and removing passivation layers, thereby preventing both remnants and damage to the active surface.
Solution Approach 2:
The invention uses the backside surface as an intermediary location for dielectric layer formation, avoiding direct contact with the active surface. This mediator approach allows warpage compensation without compromising active surface integrity.
3Manufacturing precision
If multiple steps are used to form dielectric layers on the backside surface, then better control is achieved, but throughput decreases and costs increase
Solution Approach 1:
The invention merges the dielectric layer formation process into a single direct step on the backside surface, eliminating the need for separate passivation layer deposition and removal steps. This consolidation maintains control while improving throughput and reducing costs.
Solution Approach 2:
The invention performs the dielectric layer formation directly on the backside surface as a preliminary action before any active surface processing. This preliminary positioning eliminates the need for subsequent passivation layer removal and prevents active surface damage.
4Device complexity
If the active surface is exposed during dielectric layer formation, then no passivation layer is needed, but the active surface may be damaged by reacting gases
Solution Approach 1:
The invention segments the processing by directing reacting gases exclusively to the backside surface through the showerhead configuration. This spatial segmentation protects the active surface from harmful gases while allowing dielectric layer formation on the backside.
Solution Approach 2:
The invention applies local quality by providing reacting gases only where needed (backside surface) while keeping the active surface exposed but protected from harmful exposure. The showerhead is positioned and configured to deliver gases locally to the backside surface only.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces costs, improves throughput, and maintains the integrity of the active surface by avoiding passivation layer remnants and damage, while effectively compensating for warpage with minimal bow variation.
Implementation Method 1
providing reacting gases by the showerhead from a bottom side of the chamber, and forming a first dielectric layer on a backside surface of the semiconductor device
Implementation Method 2
using a pedestal to provide neutral gases to prevent dielectric deposition on the active surface
Data Source
AI summary
A semiconductor device and a method and tool for film deposition are provided. The method of film deposition includes holding a semiconductor device in a chamber by a holding component, wherein the chamber is defined by a showerhead and a pedestal, providing reacting gases by the showerhead from a bottom side of the chamber, and forming a first dielectric layer on a backside surface of the semiconductor device.