Backside Diffusion Break Structure for Residual Silicon Elimination
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Solution Overview
Problem
Existing semiconductor device fabrication processes result in residual portions of silicon between diffusion breaks and adjacent placeholders, leading to current leakage and additional capacitance.
Innovation Solution
The formation of diffusion breaks from the backside of semiconductor components, ensuring uniform spacing between the diffusion break and placeholders, thereby avoiding the formation of residual silicon portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diffusion breaks are formed using conventional frontside methods, then circuit isolation between transistor gates is achieved, but non-uniform spacing creates residual silicon portions that cause current leakage and additional capacitance
Solution Approach 1:
The patent inverts the conventional approach by forming diffusion breaks from the backside of the semiconductor substrate rather than the frontside. This inversion allows uniform spacing between placeholders, eliminates residual silicon portions, and prevents current leakage and additional capacitance while maintaining effective circuit isolation between transistor gates.
Solution Approach 2:
The patent transitions from two-dimensional frontside processing to three-dimensional backside processing. By accessing the substrate from the backside, the method creates uniform spacing between placeholders and eliminates the non-uniform spacing issues that occur with frontside methods, thereby preventing harmful electrical effects.
2Reliability
If silicon layer is removed to form diffusion breaks, then circuit isolation is improved, but non-uniform spacing leaves conductive residues that compromise electrical isolation
Solution Approach 1:
By inverting the processing direction to backside formation, the patent achieves uniform spacing between placeholders and complete removal of silicon layer without conductive residues. This inversion fundamentally solves the manufacturing precision issue that plagues frontside methods.
Solution Approach 2:
The patent performs preliminary actions by forming placeholders with uniform spacing from the backside before removing the silicon layer. This preliminary uniform structure ensures that subsequent silicon removal leaves no conductive residues, guaranteeing precise electrical isolation.
3Object-generated harmful factors
If backside diffusion breaks are formed with uniform spacing, then current leakage is prevented, but process complexity increases
Solution Approach 1:
While backside processing does increase process complexity, the invention achieves superior electrical isolation and eliminates current leakage by forming uniform spacing structures from the backside. The trade-off in complexity is justified by the elimination of harmful electrical effects.
Data Source
AI summary
A semiconductor component includes a backside contact. The semiconductor component further includes two inactive transistor gates each associated with a region of source/drain material of a respective transistor. The region of source/drain material of at least one of the transistors is in direct contact with the backside contact. The semiconductor component further includes a diffusion break formed between the two inactive transistor gates and made of a dielectric material. The diffusion break extends from a lowermost surface that is substantially coplanar with a lowermost surface of the backside contact to an uppermost surface that is substantially coplanar with an uppermost surface of the region of source/drain material of at least one of the inactive transistor gates.