Backside Deep Trench Capacitor Layout for Shorter Decoupling Paths
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Solution Overview
Problem
The existing method for making semiconductor devices with deep trench capacitors (DTCs) results in a long circuit path for external connection, leading to low decoupling efficiency due to the DTC and device structure being formed in different wafers.
Innovation Solution
A semiconductor device and method where the DTC is formed on the backside of a single substrate with a device structure on the frontside, utilizing insulating layers and interconnect structures to create a plug that connects the device structure to the DTC, reducing the circuit path length and enhancing decoupling efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the DTC and device structure are formed in different wafers, then the fabrication process can be simplified, but the circuit path becomes long and decoupling efficiency decreases
Solution Approach 1:
The patent merges the DTC and device structure fabrication onto a single substrate, eliminating the need for separate wafers. The DTC is formed on the backside of the substrate while the device structure is formed on the frontside, with interconnect structures bridging the two sides to create a short circuit path, thus combining previously separate fabrication processes into one unified substrate.
Solution Approach 2:
The patent utilizes the third dimension by forming the DTC on the backside of the substrate while the device structure is on the frontside. This vertical arrangement across the substrate thickness reduces the horizontal circuit path length and enables compact integration without requiring multiple separate wafers.
2Adaptability or versatility
If the DTC and device structure are formed in different wafers, then each wafer can be optimized independently, but the circuit path length increases
Solution Approach 1:
The patent combines both structures on a single substrate, allowing independent optimization of each structure while maintaining short interconnect paths. The merging eliminates the need for long inter-wafer connections while preserving the ability to independently design and optimize the DTC and device structure regions.
Solution Approach 2:
The substrate is segmented into frontside and backside regions, each optimized for its specific function (device structure on frontside, DTC on backside). This segmentation allows independent optimization of each region while keeping them physically close through the substrate, minimizing circuit path length.
3Reliability
If more components are integrated per unit area, then decoupling efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The patent moves from a planar two-wafer configuration to a three-dimensional single-substrate configuration. By utilizing the substrate thickness dimension and forming structures on both front and back surfaces, the design achieves higher component density without proportionally increasing manufacturing complexity, as both structures share the same substrate fabrication process.
Solution Approach 2:
The single substrate serves multiple functions: it hosts both the device structure on the frontside and the DTC on the backside, and provides the interconnect medium through its thickness. This multi-functionality reduces the number of separate components and interfaces needed, simplifying manufacturing while achieving high integration.
Data Source
AI summary
A semiconductor device and a method for making it are disclosed. The semiconductor device includes a first substrate having a front side and a backside opposite thereto, wherein a device structure is formed at the front side of the first substrate, and a DTC is formed at the backside of the first substrate; a first insulating layer and a second insulating layer, which are formed on the front side and the backside of the first substrate, respectively; a first interconnect structure and a second interconnect structure, the first interconnect structure formed in the first insulating layer, the second interconnect structure formed in the second insulating layer; and a plug structure formed in the first insulating layer, one end of the plug structure electrically connected to the device structure through the first interconnect structure, the other end of the plug structure electrically connected to the DTC through the second interconnect structure.