Backside Electrode Gap Layout for HV Breakdown Voltage Control
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Solution Overview
Problem
High voltage semiconductor devices in integrated circuits face challenges in achieving high breakdown voltages and electrical field uniformity, which are crucial for efficient performance and reduced leakage current, especially in RF transmission/receiving chains.
Innovation Solution
Incorporating a backside electrode with strategically placed gaps beneath high voltage semiconductor devices on a silicon on insulator substrate, where the electrode is grounded or held at a suitable bias voltage, improves breakdown voltage and electrical field uniformity by enhancing the effectiveness of the electrode's coverage and pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a backside electrode is added to improve breakdown voltage, then the absolute breakdown voltage increases, but the device structure becomes more complex
Solution Approach 1:
The patent introduces a backside electrode located on the opposite side of the semiconductor substrate from the high voltage device. This spatial arrangement in a different dimension (backside vs. frontside) allows the electrode to influence the electric field distribution and increase breakdown voltage without interfering with the conventional device structure on the frontside.
Solution Approach 2:
The backside electrode is divided into multiple segmented electrodes rather than a single continuous electrode. Each segmented electrode can be independently controlled and optimized for specific regions, allowing selective enhancement of breakdown voltage in different areas while maintaining overall structural manageability.
2Reliability
If the backside electrode coverage is increased to improve field uniformity, then the electrical field uniformity improves, but the chip area usage becomes less efficient
Solution Approach 1:
The backside electrode structure incorporates gaps or openings in specific locations rather than providing continuous coverage. The electrode coverage is optimized locally - present in regions where field uniformity enhancement is needed and absent in regions where device active areas or other structures require space. This selective local coverage achieves field uniformity improvement without unnecessary chip area consumption.
3Reliability
If gaps are added to the backside electrode to improve field uniformity, then the electrical field uniformity increases, but the electrode structure becomes more complex
Solution Approach 1:
Gaps are strategically positioned in the backside electrode at specific locations where electric field concentration or non-uniformity occurs. Rather than uniformly distributing gaps throughout the electrode, they are placed locally where needed to address specific field uniformity issues, achieving effective improvement with minimal structural complexity.
Solution Approach 2:
The backside electrode is divided into multiple segments by introducing gaps between them. Each electrode segment can be independently optimized and controlled, allowing flexible adjustment of the electric field distribution pattern while maintaining a manageable structure through modular segmentation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the absolute breakdown voltage and improves electrical field uniformity within the semiconductor devices, leading to enhanced performance and reduced leakage current, while maintaining efficient chip area usage.
Implementation Method 1
the electrode is grounded or held at a suitable bias voltage, improves breakdown voltage and electrical field uniformity by enhancing the effectiveness of the electrode's coverage and pattern
Data Source
AI summary
An integrated circuit (IC) device comprises a high voltage semiconductor device (HVSD) on a frontside of a semiconductor body and further comprises an electrode on a backside of the semiconductor body opposite the frontside. The HVSD may for example, be a transistor or some other suitable type of semiconductor device. The electrode has one or more gaps directly beneath the HVSD. The one or more gaps enhance the effectiveness of the electrode for improving the breakdown voltage of the HVSD.