Backside Electrode Joining for Thin Semiconductor Heat Dissipation
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Solution Overview
Problem
The reduction in thickness of semiconductor devices leads to increased heating values and instability due to high temperatures, posing risks to the operation and stability of the devices.
Innovation Solution
A method involving the formation of a first electrode layer on the base material back surface and a second electrode layer on a film-formed member, followed by joining and removing the film-formed member, which includes using a support substrate to stabilize the base material during thinning and employing water to reduce joining strength, allowing for a thicker back surface electrode portion composed of both layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the thickness of the base material is reduced to improve semiconductor device characteristics, then device performance is improved, but the temperature of the semiconductor device becomes high leading to unstable operation
Solution Approach 1:
The back surface electrode portion is divided into a first electrode layer formed directly on the base material and a second electrode layer formed on a separate film-formed member that is subsequently joined to the first electrode layer. This segmentation allows the second electrode layer to serve as an additional heat dissipation path and structural reinforcement without increasing the base material thickness.
Solution Approach 2:
Instead of increasing thickness in the vertical dimension to reduce heat, the solution adds a second electrode layer that extends the heat dissipation function to another dimensional layer. The film-formed member with the second electrode layer is joined to the first electrode layer, creating a multi-layer electrode structure that dissipates heat more effectively without compromising device characteristics.
2Manufacturing precision
If the thickness of the base material is reduced, then device characteristics are improved, but the heating value generated by the circuit portion becomes more significant
Solution Approach 1:
The film-formed member acts as an intermediary structure that carries the second electrode layer. This intermediary element provides an additional thermal conduction path from the circuit portion to the external environment, helping to dissipate the increased heating value that results from the reduced base material thickness.
Solution Approach 2:
The back surface electrode portion is constructed as a composite structure with two distinct electrode layers. The first electrode layer is formed on the base material while the second electrode layer is formed on the film-formed member and then joined to the first electrode layer. This composite electrode structure enhances thermal management capabilities.
3Temperature
If a thicker back surface electrode portion is formed to reduce thermal resistance, then thermal management is improved, but the base material becomes more susceptible to mechanical damage
Solution Approach 1:
The electrode structure is segmented into two separate layers formed at different stages. The first electrode layer is formed on the thinned base material, and the second electrode layer is formed on a separate film-formed member that is subsequently joined. This segmentation allows the base material to remain thin for good device characteristics while the combined two-layer electrode structure provides the necessary thermal management and structural support.
Solution Approach 2:
The film-formed member with the second electrode layer serves as a protective cushioning layer that is joined to the first electrode layer beforehand. This pre-attached structure provides mechanical reinforcement to the thinned base material, protecting it from damage during subsequent processing steps such as dicing and handling, while also contributing to heat dissipation.
Data Source
AI summary
A method for manufacturing a semiconductor device of an embodiment includes a first film forming step of forming a first electrode layer on a base material back surface facing a side opposite to a device surface of a base material on which a circuit portion is formed. The method includes a second film forming step of forming a second electrode layer on a front surface of a film-formed member. The method includes a joining step of joining the first electrode layer and the second electrode layer. The method includes a film-formed member removing step of removing the film-formed member from the second electrode layer.