Backside Fuse Structure With Backside Contact for Lower Programming Current
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Solution Overview
Problem
Conventional semiconductor IC devices face challenges in scaling and reducing signal and power wiring routing complexities due to the limitations of existing fuse structures, which also require higher programming currents.
Innovation Solution
The integration of a fuse structure with a backside contact and fuse wire connected to both the frontside and backside BEOL networks, allowing for reduced wiring complexities and lower programming currents by placing the fuse wire closer to the FEOL microdevice, and enabling programmable states that alter current flow between the networks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional fuse structures are used, then the device can be manufactured with existing processes, but the device cannot be further scaled and has complex wiring routing
Solution Approach 1:
The fuse wire is positioned in the vertical dimension between the frontside FEOL microdevice and the backside BEOL network, utilizing the third dimension (depth) to route the fuse connection. This vertical placement through deep via contacts eliminates the need for complex lateral wiring routing on the frontside, thereby enabling device scaling while reducing wiring complexity.
2Use of energy by moving object
If conventional fuse structures are used, then the fuse can be implemented with standard materials, but the programming current requirement is high
Solution Approach 1:
The deep via contact serves as an intermediary structure that connects the fuse wire to the frontside BEOL network. This intermediary placement allows the fuse wire to be positioned closer to the FEOL microdevice, reducing the current path length and thereby reducing the programming current requirement from conventional levels to three to six times lower.
3Use of energy by moving object
If the fuse wire is placed closer to the FEOL microdevice, then the programming current is reduced, but the wiring routing becomes more complex
Solution Approach 1:
The fuse wire is positioned in the vertical dimension between the frontside FEOL microdevice and the backside BEOL network, utilizing the third dimension (depth) to route the fuse connection. This vertical placement through deep via contacts eliminates the need for complex lateral wiring routing on the frontside, thereby enabling device scaling while reducing wiring complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables further scaling of semiconductor IC devices, reduces wiring complexities, and lowers programming current requirements, enhancing operational flexibility and efficiency.
Implementation Method 1
The fuse wire is connected to a backside contact and to a deep via contact that is connected to a frontside back end of the line (BEOL) network. When the fuse structure is in a non-programmed state, the backside contact is a terminal for routing current through the transistor and for routing current between the frontside BEOL network and the backside BEOL network by way of the fuse wire.
Implementation Method 2
eFUSEs can be respective silicon or metal traces and typically work (by blowing or programming) by electromigration, the phenomenon that electric flow causes the conductor material to move. Although electromigration is generally undesired in semiconductor IC device design as it causes failures, eFUSEs are made of weak traces that are designed to fail before others do.
Data Source
AI summary
A semiconductor integrated circuit (IC) device includes a backside fuse structure and a backside contact. The backside fuse structure is located within the backside of the semiconductor IC device vertically between a transistor there above and a backside back end of the line (BEOL) network. The backside fuse structure includes a fuse wire and a deep via contact that is connected to both the fuse wire and to a frontside BEOL network. The backside contact is connected to the transistor, to the backside BEOL network, and to the fuse wire. The backside fuse structure may be in a non-programmed state or a programmed state. When in a non-programmed state, an open circuit exists that prevents current flow through the fuse wire or through the backside contact.