Backside Gate Contact Layout for Signal and Power Routing
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Solution Overview
Problem
Current semiconductor technologies face challenges in reducing process complexity and improving routing congestion in backside interconnects, which are limited to only power lines without signal lines.
Innovation Solution
The semiconductor structure incorporates a backside gate extension extending from a frontside gate region through a dielectric isolation layer, with a backside gate contact partially disposed on the backside gate extension, and a backside interconnect connected to the backside gate extension by the backside gate contact, allowing for both power and signal lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If backside interconnect is limited to only power lines, then process complexity is reduced, but routing congestion increases and functionality is limited
Solution Approach 1:
The backside interconnect is segmented into separate power lines and signal lines, allowing independent routing and functionality. The gate extension structure is divided into a first portion (in contact with gate) and second portion (extending to backside), enabling distinct power and signal pathways.
Solution Approach 2:
The gate extension extends vertically through the dielectric isolation layer from the frontside gate region to the backside, adding a vertical dimension to the interconnect architecture. This enables backside access to both power and signal lines without increasing lateral routing congestion.
2Adaptability or versatility
If backside interconnect includes both power and signal lines, then routing capability improves, but process complexity increases
Solution Approach 1:
The gate extension structure serves multiple functions: it provides both power delivery (through the first portion contacting the gate) and signal routing (through the second portion extending to the backside). This multi-functionality reduces the need for separate dedicated structures.
Solution Approach 2:
The power line and signal line are merged into a single gate extension structure that extends through the dielectric layer, combining what would traditionally require separate structures. The backside gate contact unifiedly connects both interconnect types.
3Ease of operation
If gate extension extends through dielectric isolation layer, then backside access is enabled, but manufacturing precision requirements increase
Solution Approach 1:
The gate extension is formed as an integral part of the gate structure during frontside processing, before backside access is needed. This preliminary formation ensures proper alignment and reduces subsequent manufacturing complexity.
Solution Approach 2:
The dielectric isolation layer acts as an intermediary that the gate extension penetrates to reach the backside. This intermediate layer provides a controlled pathway through the substrate, facilitating precise alignment and isolation.
Data Source
AI summary
A semiconductor structure includes a backside gate extension extending from a frontside gate region through a dielectric isolation layer, a backside gate contact partially disposed on the backside gate extension, and a backside interconnect connected to the backside gate extension by the backside gate contact.