Backside IC Thermal Layer for Localized Heat Dissipation
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Solution Overview
Problem
Modern integrated circuits (ICs) face challenges with high localized heat accumulation due to the low thermal conductivity of dielectric materials used in interconnect structures, which can lead to semiconductor device breakdown and delamination of layers.
Innovation Solution
Incorporating high thermal conductivity layers with thermal conductivities greater than 10 W/m-K into the interconnect structure of ICs, specifically in the dielectric structure on the backside of the semiconductor devices, to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dielectric materials are used in interconnect structures, then electrical insulation is provided, but thermal conductivity is low causing heat accumulation
Solution Approach 1:
The patent employs composite interconnect structures combining metal layers with dielectric materials having enhanced thermal conductivity. Specifically, tungsten or copper interconnect layers are paired with dielectric materials like silicon oxide or silicon nitride that possess higher thermal conductivity than conventional dielectrics, creating a composite structure that simultaneously provides electrical insulation and improved heat dissipation
Solution Approach 2:
The patent modifies the thermal conductivity parameter of dielectric materials by selecting materials with specifically optimized thermal properties. The dielectric materials are chosen to have thermal conductivity values greater than conventional materials (e.g., silicon oxide with k>1.0 W/mK, silicon nitride with k>1.5 W/mK), fundamentally changing the thermal transport characteristics of the interconnect structure while maintaining electrical insulation
2Ease of manufacture
If conventional dielectric materials are used, then manufacturing is simplified, but thermal dissipation performance is poor
Solution Approach 1:
The patent creates composite interconnect-dielectric structures where conventional fabrication processes are used to deposit tungsten or copper interconnect layers alongside dielectric layers with enhanced thermal conductivity. The composite structure leverages existing manufacturing capabilities while improving thermal performance through material selection rather than process complexity
Solution Approach 2:
The patent applies localized quality enhancement by specifically selecting dielectric materials with superior thermal conductivity properties for critical heat dissipation regions. The dielectric materials are engineered to have locally optimized thermal properties in areas where heat accumulation is most problematic, while maintaining standard manufacturing processes
3Power
If high current is delivered to semiconductor devices, then power delivery is improved, but localized heat accumulation increases causing breakdown and delamination
Solution Approach 1:
The patent employs composite interconnect structures with high-conductivity metals (tungsten, copper) combined with thermally-enhanced dielectric materials to create a composite system capable of handling high current loads. The composite structure distributes heat more effectively throughout the interconnect-dielectric assembly, preventing localized hot spots that would cause breakdown or delamination under high power conditions
Solution Approach 2:
The dielectric materials with enhanced thermal conductivity act as thermal intermediaries, facilitating heat transfer from the high-current-carrying metal interconnect layers to surrounding heat sinks. These dielectric layers mediate the thermal management function, enabling high power delivery by providing a thermal conduction pathway that prevents harmful heat accumulation at critical interfaces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of high thermal conductivity layers effectively disperses heat away from semiconductor devices, reducing localized heat accumulation, improving thermal dissipation performance, and enhancing the reliability and overall performance of the ICs.
Implementation Method 1
one or more high thermal conductivity layers disposed on the plurality of semiconductor devices and configured to increase dispersion of heat away from the plurality of semiconductor devices
Data Source
AI summary
The present disclosure relates to an integrated circuit (IC) structure. The IC structure includes a semiconductor device having a frontside and a backside opposite the frontside. A first interconnect structure disposed on the frontside of the semiconductor device. The first interconnect structure comprises a first dielectric structure having a plurality of inter-level dielectric (ILD) layers. A second dielectric structure disposed on the backside of the semiconductor device. The second dielectric structure comprises a first high thermal conductivity layer having a thermal conductivity greater than that of the ILD layers.