Backside IC Interconnect Structure With High Thermal Conductivity Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Integrated circuits (ICs) face challenges with high localized heat accumulation due to low thermal conductivity of dielectric materials, leading to semiconductor device breakdown and reduced reliability and performance.
Innovation Solution
Incorporating high thermal conductivity layers into the interconnect structure of ICs, particularly in the second interconnect structure on the backside of the device layer, to efficiently dissipate heat away from semiconductor devices and conductive interconnects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dielectric materials are used in interconnect structures, then electrical insulation is provided, but thermal conductivity is low causing heat accumulation
Solution Approach 1:
The patent applies composite materials by combining dielectric layers with high thermal conductivity layers (such as metal layers or specialized thermal conductive materials) in the interconnect structure. This composite approach allows the structure to simultaneously provide electrical insulation through the dielectric material while achieving effective heat dissipation through the high thermal conductivity layers, thereby resolving the contradiction between electrical insulation and thermal management.
Solution Approach 2:
The interconnect structure is segmented into multiple functional layers: dielectric layers for electrical insulation and separate high thermal conductivity layers for heat dissipation. This segmentation allows each layer to perform its specific function optimally - the dielectric layers maintain electrical isolation while the dedicated thermal conductivity layers handle heat removal, preventing heat accumulation without compromising electrical insulation.
2Temperature
If high thermal conductivity layers are added to improve heat dissipation, then thermal dissipation performance increases, but device complexity increases
Solution Approach 1:
The high thermal conductivity layers are designed to serve multiple functions within the interconnect structure. These layers not only provide thermal management by conducting heat away from hot spots, but also serve as part of the overall structural framework and can be integrated with existing conductive interconnect layers. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving improved thermal dissipation.
3Reliability
If more high thermal conductivity layers are added, then heat dissipation improves, but manufacturing complexity increases
Solution Approach 1:
The patent optimizes the parameters of the high thermal conductivity layers, such as thickness, material composition, and spatial distribution, to achieve effective thermal management with minimal layer count. By carefully selecting and tuning these parameters, the design achieves improved heat dissipation while keeping the manufacturing process manageable, avoiding the need for excessive numbers of layers that would complicate fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The high thermal conductivity layers effectively reduce localized heat accumulation, enhancing the reliability and performance of ICs by improving thermal dissipation and reducing damage to semiconductor devices.
Implementation Method 1
one or more high thermal conductivity layers disposed on the plurality of semiconductor devices and configured to increase dispersion of heat away from the plurality of semiconductor devices
Data Source
AI summary
The present disclosure relates to an integrated circuit (IC) structure. The IC structure includes a semiconductor device having a frontside and a backside opposite the frontside. A first interconnect structure disposed on the frontside of the semiconductor device. The first interconnect structure comprises a first dielectric structure having a plurality of inter-level dielectric (ILD) layers. A second dielectric structure disposed on the backside of the semiconductor device. The second dielectric structure comprises a first high thermal conductivity layer having a thermal conductivity greater than that of the ILD layers.