Backside Interconnect Structure for Heat Dissipation and Low Leakage
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Solution Overview
Problem
As semiconductor technology advances, the increasing integration density of electronic components leads to higher parasitic capacitance and RC time delays, as well as inadequate heat dissipation in integrated circuits, necessitating a solution that improves both thermal conductivity and electrical isolation.
Innovation Solution
A semiconductor structure featuring a high thermal conductivity dielectric material with a high breakdown strength liner and etching stop layers is implemented around the backside metallization scheme, enhancing heat dissipation and reducing electrical leakage between metal features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased to improve circuit functionality, then more electronic components can be integrated, but parasitic capacitance and RC time delays increase
Solution Approach 1:
The patent applies local quality by using different dielectric materials with different properties in different regions. Specifically, low-k dielectric material is used in the first inter-metal dielectric layer to reduce parasitic capacitance and RC time delays, while high thermal conductivity dielectric material is used in the second inter-metal dielectric layer to improve heat dissipation. This localized material selection optimizes both electrical performance and thermal management in different functional regions of the interconnect structure.
2Productivity
If integration density is increased to improve circuit functionality, then more electronic components can be integrated, but heat dissipation capability deteriorates
Solution Approach 1:
The patent applies local quality by using different dielectric materials with different properties in different regions. Specifically, low-k dielectric material is used in the first inter-metal dielectric layer to reduce parasitic capacitance and RC time delays, while high thermal conductivity dielectric material is used in the second inter-metal dielectric layer to improve heat dissipation. This localized material selection optimizes both electrical performance and thermal management in different functional regions of the interconnect structure.
Solution Approach 2:
The patent employs composite materials by combining different dielectric materials in a multi-layer intermetal dielectric structure. The structure integrates low-k dielectric material for electrical performance optimization and high thermal conductivity dielectric material for thermal management, creating a composite system that simultaneously addresses both electrical and thermal challenges in high-density integrated circuits.
3Ease of manufacture
If traditional inter-metal dielectric schemes are used to maintain electrical isolation, then manufacturing is simpler, but heat dissipation capability is insufficient
Solution Approach 1:
The patent employs composite materials by combining different dielectric materials in a multi-layer intermetal dielectric structure. The structure integrates low-k dielectric material for electrical performance optimization and high thermal conductivity dielectric material for thermal management, creating a composite system that simultaneously addresses both electrical and thermal challenges in high-density integrated circuits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces RC time delays and improves heat dissipation while maintaining low electric leakage, addressing the limitations of traditional inter-metal dielectric schemes in dense integration environments.
Implementation Method 1
a back dielectric unit disposed on a back surface of the substrate opposite to the front surface and including at least one first part which includes a first dielectric portion having a thermal conductivity which is greater than that of the front dielectric portion
Implementation Method 2
at least one first part further includes a first liner portion which has a breakdown field which is greater than that of the first dielectric portion
Data Source
AI summary
A semiconductor structure includes a base structure including a substrate and a device unit disposed on a front surface of the substrate, a front dielectric portion disposed on the front surface to cover the device unit, a front conductive layer disposed in the front dielectric portion and connected to the device unit, a back dielectric unit disposed on a back surface of the substrate opposite to the front surface and including at least one first part which includes a first dielectric portion having a thermal conductivity which is greater than that of the front dielectric portion, and a back conductive unit which is disposed in the back dielectric unit and connected to the device unit, and which includes at least one first conductive layer disposed in the at least one first part.