Backside Metal Resistor Contacts for Simpler IC Fabrication

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Solution Overview

Problem

Existing integrated circuit device fabrication processes for forming resistors are complex and require additional steps, particularly in the middle-of-line (MOL) or back-end-of-line (BEOL) portions, which complicates the formation of resistor contacts and wires.

Innovation Solution

The formation of resistor contacts electrically connected to a metal resistor is performed on the backside of the substrate, rather than on the front side during MOL or BEOL fabrication, simplifying these processes and allowing for concurrent formation with buried power rails.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If resistor contacts are formed on the front side during MOL or BEOL fabrication, then the resistor can be electrically connected to the circuit, but the fabrication process becomes complex and requires additional steps

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidfabrication process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies inversion by forming the resistor contacts on the backside of the substrate instead of the conventional front side during MOL or BEOL fabrication. This reverses the traditional approach where contacts are formed on the same side as the circuit, thereby simplifying the fabrication process while maintaining electrical connection reliability through the substrate thickness.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent transitions from a two-dimensional planar contact formation on the front side to a three-dimensional approach by forming contacts on the backside of the substrate. This dimensional change allows the resistor contacts to be formed in a different spatial plane, reducing process complexity while maintaining electrical connectivity through the substrate.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If additional processes are used to form resistor contacts, then the electrical connection can be established, but the manufacturing efficiency decreases

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent merges the formation of resistor contacts with the substrate preparation process by forming contacts on the backside during the same fabrication sequence. This consolidation eliminates separate additional processes that would otherwise be required to establish electrical connections, thereby improving manufacturing efficiency while maintaining connection reliability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent performs preliminary action by forming the resistor contacts on the backside of the substrate early in the fabrication process, before the MOL or BEOL stages. This advance preparation eliminates the need for additional later processes to establish electrical connections, thereby improving manufacturing efficiency without compromising connection reliability.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS12317582B2Integrated circuit devices including a metal resistor and methods of forming the same
Publication Date: 2025.05.27 SAMSUNG ELECTRONICS CO LTD
  • US12317582B2 patent drawing
  • US12317582B2 patent drawing
  • US12317582B2 patent drawing

AI summary

Integrated circuit devices including a metal resistor and methods of forming the same are provided. The integrated circuit devices may include a substrate including a first surface and a second surface that is opposite the first surface and is parallel to the first surface, a transistor including a gate electrode, first and second resistor contacts that are spaced apart from each other in a horizontal direction that is parallel to the second surface of the substrate, and a metal resistor. The first surface of the substrate may face the gate electrode. The metal resistor may include a third surface and a fourth surface that is parallel to the third surface and the second surface of the substrate, and the fourth surface of the metal resistor may be closer to the second surface than the first surface and contacts the first and second resistor contacts.