Backside Passive Components on IC Die
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Solution Overview
Problem
Current integrated circuit (IC) die designs face challenges in maximizing input/output density due to the limitations of placing both active and passive components on the same side of the semiconductor substrate, leading to inefficient use of space and signal breakout issues when components are placed on different sides.
Innovation Solution
The integration of backside passive components, such as metal-insulator-metal (MIM) capacitors, trench capacitors, and thin film resistors, on the opposite side of the semiconductor substrate, with through-substrate vias (TSVs) and redistribution layers (RDLs) to route electrical signals and enable efficient coupling with active components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If both passive and active components are disposed on the same side of the semiconductor substrate, then signal breakout issues are avoided, but IC die area utilization is inefficient
Solution Approach 1:
The patent applies dimensionality change by moving passive components from the same plane as active components to the opposite side of the semiconductor substrate. This spatial separation across different sides (dimensions) of the substrate allows both active and passive components to coexist without interfering with signal breakout, while maximizing the utilization of the entire IC die area including the previously underutilized backside.
2Area of stationary object
If passive components are placed on the backside of the semiconductor substrate, then IC die area utilization is improved, but signal breakout issues arise
Solution Approach 1:
The patent introduces through-substrate vias (TSVs) as intermediary structures that penetrate the semiconductor substrate to establish electrical connections between passive components on the backside and active components on the front side. These TSVs act as mediators that enable signal transmission across the substrate thickness, resolving the signal breakout issue while maintaining the benefit of backside component placement for improved area utilization.
3Productivity
If IC die size is decreased to increase input/output density, then integration is improved, but component placement flexibility is reduced
Solution Approach 1:
The patent utilizes the third dimension (the backside of the substrate) to place passive components, effectively adding available placement area without increasing the top-down footprint of the IC die. This dimensional expansion allows higher input/output density to be achieved on a smaller die size while maintaining sufficient space for all necessary components.
Data Source
AI summary
Embodiments of the present disclosure are directed towards an integrated circuit (IC) die. In embodiments, the IC die may include a semiconductor substrate, a plurality of active components disposed on a first side of the semiconductor substrate, and a plurality of passive components disposed on a second side of the semiconductor substrate. In embodiments the second side may be disposed opposite the first side. The passive components may, in some embodiments, include capacitors and/or resistors while the active components may, in some embodiments, include transistors. Other embodiments may be described and/or claimed.