Backside Transmissive Photonics Structure for Lower Optical Loss
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Solution Overview
Problem
Interferences caused by structures in the transmissive region adjacent to the photodiode structure lead to transmission losses, reducing the performance and increasing the size and cost of photonics devices.
Innovation Solution
Incorporating a backside transmissive region with a trench structure and reflective properties to minimize interference, such as a trench structure with reflective coatings or micro-lens structures, which maintains optical power and reduces transmission losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If structures are present in the transmissive region adjacent to the photodiode structure, then the device can be manufactured with standard processes, but transmission losses occur due to interference, reducing performance
Solution Approach 1:
The patent removes structures from the transmissive region by creating a trench structure that extracts interfering elements from the optical path. The trench structure isolates the photodiode structure from adjacent structures, eliminating interference sources while maintaining manufacturability through standard semiconductor processing techniques.
Solution Approach 2:
The patent introduces a trench structure as an intermediary element between the photodiode structure and adjacent structures. This trench structure with reflective properties acts as a mediator that prevents direct interference while allowing the device to be manufactured with standard processes.
2Ease of manufacture
If structures are present in the transmissive region, then the device can be manufactured, but the size and cost of the photonics device increase
Solution Approach 1:
The patent extracts interfering structures from the transmissive region, reducing device complexity. By removing these structures and replacing them with a trench structure, the overall device size is reduced and manufacturing cost is lowered while maintaining ease of manufacture through standard processes.
Solution Approach 2:
The patent applies local quality by creating a trench structure with specific reflective properties only in the regions where interference occurs. This localized approach modifies only the necessary areas with adjacent trenches, leaving other regions unchanged, thereby reducing overall device complexity and cost.
3Loss of energy
If a trench structure with reflective properties is implemented, then transmission losses are reduced, but the device complexity increases
Solution Approach 1:
The patent implements local quality by adding reflective properties only to the trench structure where needed, rather than modifying the entire device. The trenches are created with reflective linings or coatings only in specific locations adjacent to the photodiode structure, reducing transmission losses without significantly increasing overall device complexity.
Solution Approach 2:
The patent changes physical parameters of the trench structure, such as depth, width, and reflective coating properties, to optimize transmission loss reduction. By adjusting these parameters, the device achieves improved optical performance with minimal increase in structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the performance of photonics devices by reducing reflection, absorption, and scattering losses, allowing for higher yield and categorization in premium product categories.
Implementation Method 1
the trench structure includes one or more reflective properties that maintain an optical power of light waves propagating through the transmissive region
Implementation Method 2
A photodetector is a semiconductor device that is configured to receive photons of incident light and convert the photons to an electrical signal
Data Source
AI summary
Some implementations described herein provide techniques and apparatuses provide a semiconductor device including a photonics device having a backside transmissive region and methods of manufacturing. The semiconductor device includes a first semiconductor device stacked over a second semiconductor device, where the first semiconductor device includes a photodiode structure and the second semiconductor device includes the backside transmissive region. The backside transmissive region, which is below the photodiode structure of the first semiconductor device, includes a trench structure having highly reflective structures and/or properties to maintain an optical power of light waves propagating through the backside transmissive region. An absence of structures within the trench structure lessens a likelihood of interferences which may cause a transmission loss (e.g., a reflection loss, an absorption loss, a scattering loss, and/or a mode mismatch loss) relative to another transmissive region that is adjacent to the photodiode structure.