Backside Power Delivery Structure for Shorter Multi-Height Standard Cells

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Solution Overview

Problem

The scaling of multi-gate transistors in integrated circuits faces challenges due to variability in conventional fabrication processes, limiting further miniaturization beyond the 10 nanometer node, and requires new methodologies for efficient power delivery in tight spaces.

Innovation Solution

Implementing backside power delivery, where power is delivered directly to transistors from the wafer's backside, reducing the need for front-side power routing and allowing for shorter standard cell height, lower power network resistance, and improved performance by utilizing border tracks for signal routing and parasitic RC improvements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If front-side power delivery is used, then power can be delivered to transistors, but cell height increases and parasitic RC is higher

Engineering Contradiction:
Improvestandard cell heightVSAvoidpower delivery efficiency
Core Design Contradiction:
Length of moving objectVSReliability

Solution Approach 1:

The patent delivers power from the backside of the substrate rather than the front side, utilizing the third dimension (depth/substrate thickness) to route power contacts directly to transistor regions. This dimensional change allows power delivery without increasing planar cell footprint or height, while reducing parasitic resistance by shortening current paths through the substrate.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If feature size is scaled down to increase device density, then capacity increases, but fabrication variability worsens and process constraints become overwhelming

Engineering Contradiction:
Improvedevice densityVSAvoidfabrication process control
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent segments the power delivery function from the signal routing function by using separate backside power contacts and front-side signal interconnects. This segmentation allows independent optimization of power delivery paths and signal routing, reducing process constraints and improving manufacturability at scaled dimensions where simultaneous control of both functions becomes difficult.

Inventive Principle:
Principle #1Segmentation

3Power

If more power routing is integrated on the front side, then power delivery capability improves, but available space for signal routing decreases

Engineering Contradiction:
Improvepower delivery capabilityVSAvoidrouting layout complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The patent extracts the power delivery function from the front-side interconnect structure and relocates it to the backside of the substrate. This extraction frees up front-side routing resources for signal connections, reducing layout complexity and allowing more flexible signal routing without compromising power delivery capability.

Inventive Principle:
Principle #2Taking out (Extraction)

Data Source

PatentUS20240063210A1Integrated circuit structure with backside power delivery for multi-height standard cell circuits
Publication Date: 2024.02.22 INTEL CORP
  • US20240063210A1 patent drawing
  • US20240063210A1 patent drawing
  • US20240063210A1 patent drawing

AI summary

Integrated circuit structures having backside power delivery for multi-height standard cell circuits are described. In an example, an integrated circuit structure includes a front-side structure including a device layer including a first cell separated from a second cell by a cell boundary, and a metallization layer immediately above the device layer. A track of the metallization layer is along the cell boundary from a plan view perspective. A backside structure is below the device layer. The backside structure provides power to the device layer.